Observation of Photovoltaic Effect and Single-photon Detection in Nanowire Silicon pn-junction

• Main Authors: Arief Udhiarto, Sri Purwiyanti, Daniel Moraru, Takeshi Mizuno, Michiharu Tabe
• Format: Article
• Language: English
• Published: Universitas Indonesia 2013-09-01
• Series: Makara Journal of Technology
• Subjects: dopant cluster, nanowire pn-junction, single dopant, single photon
• Online Access: http://journal.ui.ac.id/technology/journal/article/view/264
• ISSN: 2355-2786; 2356-4539

<p>We&nbsp; study&nbsp; nanowire&nbsp; silicon&nbsp; pin&nbsp; and&nbsp; pn-junctions&nbsp; at&nbsp; room&nbsp; and&nbsp; low&nbsp; temperature.&nbsp; Photovoltaic&nbsp; effects&nbsp; are&nbsp; observed&nbsp; for both devices at room temperature. At low temperature, nanowire pn-junction devices show their ability to detect single photon. This ability was not been observed for pin devices. Phosphorus-boron dopant cluster in the depletion region is considered&nbsp; to&nbsp; have&nbsp; the&nbsp; main&nbsp; role&nbsp; for&nbsp; single-photon&nbsp; detection&nbsp; capability.&nbsp; Fundamental&nbsp; mechanism&nbsp; of&nbsp; dopant-based single-photon detection in nanowire pn-junction is described in details.</p>