Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures
Molybdenum disulphide (MoS2) is currently regarded as a promising material for the next generation of electronic and optoelectronic devices. However, several issues need to be addressed to fully exploit its potential for field effect transistor (FET) applications. In this context, the contact resist...
Main Authors: | Filippo Giannazzo, Gabriele Fisichella, Aurora Piazza, Salvatore Di Franco, Giuseppe Greco, Simonpietro Agnello, Fabrizio Roccaforte |
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Format: | Article |
Language: | English |
Published: |
Beilstein-Institut
2017-01-01
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Series: | Beilstein Journal of Nanotechnology |
Subjects: | |
Online Access: | https://doi.org/10.3762/bjnano.8.28 |
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