Diffusion bonding of Cu atoms with molecular dynamics simulations
Diffusion bonding of copper disks is an important step during the assembly of accelerating structures -the main components of power radio-frequency linear accelerators-. During the diffusion bonding copper disks are subjected to pressure at high temperatures. Finding the optimal combination of press...
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doaj-38fe67a7ac2b4d9c9ebae5522c0dfa922020-11-25T03:18:47ZengElsevierResults in Physics2211-37972020-03-0116102890Diffusion bonding of Cu atoms with molecular dynamics simulationsA. Xydou0S. Parviainen1F. Djurabekova2CERN, European Organization for Nuclear Research, Switzerland; MEAD, Mechanical Engineering and Aeronautics Department, University of Patras, Greece; Corresponding author at: CERN, European Organization for Nuclear Research, Switzerland.Helsinki Institute of Physics and Department of Physics, P.O. Box 43, 00014, University of Helsinki, FinlandHelsinki Institute of Physics and Department of Physics, P.O. Box 43, 00014, University of Helsinki, Finland; Department of Plasma Physics, National Research Nuclear University MEPHI, 31 Moscow, RussiaDiffusion bonding of copper disks is an important step during the assembly of accelerating structures -the main components of power radio-frequency linear accelerators-. During the diffusion bonding copper disks are subjected to pressure at high temperatures. Finding the optimal combination of pressure and temperature will enable an accurate design of manufacturing workflow and machining tolerances. However, required optimization is not possible without good understanding of physical processes developed in copper under pressure and high temperature. In this work, the combined effect of temperature and pressure on closing time of inter-granular voids is examined by means of molecular dynamics simulations. In particular, a nano-void of 3.5–5.5 nm in diameter representing a peak and a valley of surface roughness facing each other was inserted between identical copper grains. The simulations performed at T = 1250 K, the temperature used in experimental condition, and the 300–800 MPa pressure range indicated the dislocation-mediated enhancement of atomic diffusion leading to full void closure.http://www.sciencedirect.com/science/article/pii/S2211379719330116CLICCuMolecular dynamicsDiffusion bondingHigh temperature |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
A. Xydou S. Parviainen F. Djurabekova |
spellingShingle |
A. Xydou S. Parviainen F. Djurabekova Diffusion bonding of Cu atoms with molecular dynamics simulations Results in Physics CLIC Cu Molecular dynamics Diffusion bonding High temperature |
author_facet |
A. Xydou S. Parviainen F. Djurabekova |
author_sort |
A. Xydou |
title |
Diffusion bonding of Cu atoms with molecular dynamics simulations |
title_short |
Diffusion bonding of Cu atoms with molecular dynamics simulations |
title_full |
Diffusion bonding of Cu atoms with molecular dynamics simulations |
title_fullStr |
Diffusion bonding of Cu atoms with molecular dynamics simulations |
title_full_unstemmed |
Diffusion bonding of Cu atoms with molecular dynamics simulations |
title_sort |
diffusion bonding of cu atoms with molecular dynamics simulations |
publisher |
Elsevier |
series |
Results in Physics |
issn |
2211-3797 |
publishDate |
2020-03-01 |
description |
Diffusion bonding of copper disks is an important step during the assembly of accelerating structures -the main components of power radio-frequency linear accelerators-. During the diffusion bonding copper disks are subjected to pressure at high temperatures. Finding the optimal combination of pressure and temperature will enable an accurate design of manufacturing workflow and machining tolerances. However, required optimization is not possible without good understanding of physical processes developed in copper under pressure and high temperature. In this work, the combined effect of temperature and pressure on closing time of inter-granular voids is examined by means of molecular dynamics simulations. In particular, a nano-void of 3.5–5.5 nm in diameter representing a peak and a valley of surface roughness facing each other was inserted between identical copper grains. The simulations performed at T = 1250 K, the temperature used in experimental condition, and the 300–800 MPa pressure range indicated the dislocation-mediated enhancement of atomic diffusion leading to full void closure. |
topic |
CLIC Cu Molecular dynamics Diffusion bonding High temperature |
url |
http://www.sciencedirect.com/science/article/pii/S2211379719330116 |
work_keys_str_mv |
AT axydou diffusionbondingofcuatomswithmoleculardynamicssimulations AT sparviainen diffusionbondingofcuatomswithmoleculardynamicssimulations AT fdjurabekova diffusionbondingofcuatomswithmoleculardynamicssimulations |
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1724625900113231872 |