Investigation of 1/<i>f</i> and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs

Investigation of 1/<i>f</i> and Lorentzian Noise in TMAH-treated Normally-Off GaN MISFETs

A tetramethyl ammonium hydroxide (TMAH)-treated normally-off Gallum nitride (GaN) metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated and characterized using low-frequency noise (LFN) measurements in order to find the conduction mechanism and analyze the trapping behavior i...

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Bibliographic Details
Main Authors:	Ki-Sik Im, Mallem Siva Pratap Reddy, Yeo Jin Choi, Youngmin Hwang, Sung Jin An, Jea-Seung Roh
Format:	Article
Language:	English
Published:	MDPI AG 2020-08-01
Series:	Crystals
Subjects:	GaN MISFET normally-off 1/<i>f</i> noise g-r noise correlated mobility fluctuations
Online Access:	https://www.mdpi.com/2073-4352/10/8/717

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