Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method

Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method

A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient for programming data in the p-type GAA nanosheet...

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Main Authors: Lun-Chun Chen, Hung-Bin Chen, Yu-Shuo Chang, Shih-Han Lin, Ming-Hung Han, Jia-Jiun Wu, Mu-Shih Yeh, Yu-Ru Lin, Yung-Chun Wu
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Band-to-band tunneling induced hot electron (BBHE)
gate-all-around (GAA)
nanosheet
thin-film transistor (TFT)
nonvolatile memory (NVM)
Online Access:https://ieeexplore.ieee.org/document/8575137/
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spelling doaj-3a16f88ca06c45609218901b2951549b2021-03-29T18:48:11ZengIEEEIEEE Journal of the Electron Devices Society2168-67342019-01-01716817310.1109/JEDS.2018.28864468575137Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) MethodLun-Chun Chen0Hung-Bin Chen1Yu-Shuo Chang2Shih-Han Lin3Ming-Hung Han4Jia-Jiun Wu5https://orcid.org/0000-0001-9409-6792Mu-Shih Yeh6Yu-Ru Lin7Yung-Chun Wu8https://orcid.org/0000-0001-9409-6792Department of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanDepartment of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, TaiwanDepartment of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanDepartment of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanDepartment of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, TaiwanDepartment of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, TaiwanNational Nano Device Laboratories, National Applied Research Laboratories, Hsinchu, TaiwanDepartment of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanDepartment of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanA low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient for programming data in the p-type GAA nanosheet TFT NVM because the GAA nanosheet structure enhances the source-to-drain component of the electric field in its channel. Therefore, the enhanced electric field of the BBHE phenomenon creates energetic electrons that surmount the tunneling oxide barrier easily and pass shallow traps in the charge trapping layer of the GAA TFT NVM. Consequently, the p-type GAA TFT NVM achieves low-voltage programming bias and satisfactory data retention.https://ieeexplore.ieee.org/document/8575137/Band-to-band tunneling induced hot electron (BBHE)gate-all-around (GAA)nanosheetthin-film transistor (TFT)nonvolatile memory (NVM)
collection DOAJ
language English
format Article
sources DOAJ
author Lun-Chun Chen
Hung-Bin Chen
Yu-Shuo Chang
Shih-Han Lin
Ming-Hung Han
Jia-Jiun Wu
Mu-Shih Yeh
Yu-Ru Lin
Yung-Chun Wu
spellingShingle Lun-Chun Chen
Hung-Bin Chen
Yu-Shuo Chang
Shih-Han Lin
Ming-Hung Han
Jia-Jiun Wu
Mu-Shih Yeh
Yu-Ru Lin
Yung-Chun Wu
Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method
IEEE Journal of the Electron Devices Society
Band-to-band tunneling induced hot electron (BBHE)
gate-all-around (GAA)
nanosheet
thin-film transistor (TFT)
nonvolatile memory (NVM)
author_facet Lun-Chun Chen
Hung-Bin Chen
Yu-Shuo Chang
Shih-Han Lin
Ming-Hung Han
Jia-Jiun Wu
Mu-Shih Yeh
Yu-Ru Lin
Yung-Chun Wu
author_sort Lun-Chun Chen
title Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method
title_short Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method
title_full Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method
title_fullStr Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method
title_full_unstemmed Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method
title_sort low-voltage programmable gate-all-around (gaa) nanosheet tft nonvolatile memory using band-to-band tunneling induced hot electron (bbhe) method
publisher IEEE
series IEEE Journal of the Electron Devices Society
issn 2168-6734
publishDate 2019-01-01
description A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient for programming data in the p-type GAA nanosheet TFT NVM because the GAA nanosheet structure enhances the source-to-drain component of the electric field in its channel. Therefore, the enhanced electric field of the BBHE phenomenon creates energetic electrons that surmount the tunneling oxide barrier easily and pass shallow traps in the charge trapping layer of the GAA TFT NVM. Consequently, the p-type GAA TFT NVM achieves low-voltage programming bias and satisfactory data retention.
topic Band-to-band tunneling induced hot electron (BBHE)
gate-all-around (GAA)
nanosheet
thin-film transistor (TFT)
nonvolatile memory (NVM)
url https://ieeexplore.ieee.org/document/8575137/
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AT yushuochang lowvoltageprogrammablegateallaroundgaananosheettftnonvolatilememoryusingbandtobandtunnelinginducedhotelectronbbhemethod
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AT yungchunwu lowvoltageprogrammablegateallaroundgaananosheettftnonvolatilememoryusingbandtobandtunnelinginducedhotelectronbbhemethod
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