Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method
A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient for programming data in the p-type GAA nanosheet...
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doaj-3a16f88ca06c45609218901b2951549b2021-03-29T18:48:11ZengIEEEIEEE Journal of the Electron Devices Society2168-67342019-01-01716817310.1109/JEDS.2018.28864468575137Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) MethodLun-Chun Chen0Hung-Bin Chen1Yu-Shuo Chang2Shih-Han Lin3Ming-Hung Han4Jia-Jiun Wu5https://orcid.org/0000-0001-9409-6792Mu-Shih Yeh6Yu-Ru Lin7Yung-Chun Wu8https://orcid.org/0000-0001-9409-6792Department of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanDepartment of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, TaiwanDepartment of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanDepartment of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanDepartment of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, TaiwanDepartment of Electronics Engineering, Institute of Electronics, National Chiao Tung University, Hsinchu, TaiwanNational Nano Device Laboratories, National Applied Research Laboratories, Hsinchu, TaiwanDepartment of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanDepartment of Engineering and System Science, National Tsing Hua University, Hsinchu, TaiwanA low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient for programming data in the p-type GAA nanosheet TFT NVM because the GAA nanosheet structure enhances the source-to-drain component of the electric field in its channel. Therefore, the enhanced electric field of the BBHE phenomenon creates energetic electrons that surmount the tunneling oxide barrier easily and pass shallow traps in the charge trapping layer of the GAA TFT NVM. Consequently, the p-type GAA TFT NVM achieves low-voltage programming bias and satisfactory data retention.https://ieeexplore.ieee.org/document/8575137/Band-to-band tunneling induced hot electron (BBHE)gate-all-around (GAA)nanosheetthin-film transistor (TFT)nonvolatile memory (NVM) |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Lun-Chun Chen Hung-Bin Chen Yu-Shuo Chang Shih-Han Lin Ming-Hung Han Jia-Jiun Wu Mu-Shih Yeh Yu-Ru Lin Yung-Chun Wu |
spellingShingle |
Lun-Chun Chen Hung-Bin Chen Yu-Shuo Chang Shih-Han Lin Ming-Hung Han Jia-Jiun Wu Mu-Shih Yeh Yu-Ru Lin Yung-Chun Wu Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method IEEE Journal of the Electron Devices Society Band-to-band tunneling induced hot electron (BBHE) gate-all-around (GAA) nanosheet thin-film transistor (TFT) nonvolatile memory (NVM) |
author_facet |
Lun-Chun Chen Hung-Bin Chen Yu-Shuo Chang Shih-Han Lin Ming-Hung Han Jia-Jiun Wu Mu-Shih Yeh Yu-Ru Lin Yung-Chun Wu |
author_sort |
Lun-Chun Chen |
title |
Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method |
title_short |
Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method |
title_full |
Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method |
title_fullStr |
Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method |
title_full_unstemmed |
Low-Voltage Programmable Gate-All-Around (GAA) Nanosheet TFT Nonvolatile Memory Using Band-to-Band Tunneling Induced Hot Electron (BBHE) Method |
title_sort |
low-voltage programmable gate-all-around (gaa) nanosheet tft nonvolatile memory using band-to-band tunneling induced hot electron (bbhe) method |
publisher |
IEEE |
series |
IEEE Journal of the Electron Devices Society |
issn |
2168-6734 |
publishDate |
2019-01-01 |
description |
A low-voltage programmable gate-all-around (GAA) nanosheet poly-Si thin-film transistor (TFT) nonvolatile memory (NVM), which uses band-to-band tunneling induced hot electron (BBHE) programming, is demonstrated. The BBHE method is extremely efficient for programming data in the p-type GAA nanosheet TFT NVM because the GAA nanosheet structure enhances the source-to-drain component of the electric field in its channel. Therefore, the enhanced electric field of the BBHE phenomenon creates energetic electrons that surmount the tunneling oxide barrier easily and pass shallow traps in the charge trapping layer of the GAA TFT NVM. Consequently, the p-type GAA TFT NVM achieves low-voltage programming bias and satisfactory data retention. |
topic |
Band-to-band tunneling induced hot electron (BBHE) gate-all-around (GAA) nanosheet thin-film transistor (TFT) nonvolatile memory (NVM) |
url |
https://ieeexplore.ieee.org/document/8575137/ |
work_keys_str_mv |
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