Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation

Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation

A dramatically enhanced self-assembly of GeSi quantum dots (QDs) is disclosed on slightly miscut Si (001) substrates, leading to extremely dense QDs and even a growth mode transition. The inherent mechanism is addressed in combination of the thermodynamics and the growth kinetics both affected by st...

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Main Authors: Tong Zhou, Zhenyang Zhong
Format: Article
Language:English
Published: AIP Publishing LLC 2014-02-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.4866356
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spelling doaj-3a66ee8c02154339b01e812dd24abecd2020-11-25T02:45:28ZengAIP Publishing LLCAPL Materials2166-532X2014-02-0122022108022108-710.1063/1.4866356011402APMDramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientationTong Zhou0Zhenyang Zhong1State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai 200433, ChinaA dramatically enhanced self-assembly of GeSi quantum dots (QDs) is disclosed on slightly miscut Si (001) substrates, leading to extremely dense QDs and even a growth mode transition. The inherent mechanism is addressed in combination of the thermodynamics and the growth kinetics both affected by steps on the vicinal surface. Moreover, temperature-dependent photoluminescence spectra from dense GeSi QDs on the miscut substrate demonstrate a rather strong peak persistent up to 300 K, which is attributed to the well confinement of excitons in the dense GeSi QDs due to the absence of the wetting layer on the miscut substrate.http://dx.doi.org/10.1063/1.4866356
collection DOAJ
language English
format Article
sources DOAJ
author Tong Zhou
Zhenyang Zhong
spellingShingle Tong Zhou
Zhenyang Zhong
Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation
APL Materials
author_facet Tong Zhou
Zhenyang Zhong
author_sort Tong Zhou
title Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation
title_short Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation
title_full Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation
title_fullStr Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation
title_full_unstemmed Dramatically enhanced self-assembly of GeSi quantum dots with superior photoluminescence induced by the substrate misorientation
title_sort dramatically enhanced self-assembly of gesi quantum dots with superior photoluminescence induced by the substrate misorientation
publisher AIP Publishing LLC
series APL Materials
issn 2166-532X
publishDate 2014-02-01
description A dramatically enhanced self-assembly of GeSi quantum dots (QDs) is disclosed on slightly miscut Si (001) substrates, leading to extremely dense QDs and even a growth mode transition. The inherent mechanism is addressed in combination of the thermodynamics and the growth kinetics both affected by steps on the vicinal surface. Moreover, temperature-dependent photoluminescence spectra from dense GeSi QDs on the miscut substrate demonstrate a rather strong peak persistent up to 300 K, which is attributed to the well confinement of excitons in the dense GeSi QDs due to the absence of the wetting layer on the miscut substrate.
url http://dx.doi.org/10.1063/1.4866356
work_keys_str_mv AT tongzhou dramaticallyenhancedselfassemblyofgesiquantumdotswithsuperiorphotoluminescenceinducedbythesubstratemisorientation
AT zhenyangzhong dramaticallyenhancedselfassemblyofgesiquantumdotswithsuperiorphotoluminescenceinducedbythesubstratemisorientation
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