Cryogenic Floating-Gate CMOS Circuits for Quantum Control
Voltage biases are often required to bias Qubits, and yet applying a static bias requires separate chip wires, dramatically increasing the system complexity. An ideal approach would be having a nonvolatile digital or analog memory to avoid these issues. This article shows floating-gate (FG) structur...
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2021-01-01
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| Series: | IEEE Transactions on Quantum Engineering |
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| Online Access: | https://ieeexplore.ieee.org/document/9384301/ |
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doaj-3aa5a681a91849579fcc0c462114185b2021-06-03T23:09:58ZengIEEEIEEE Transactions on Quantum Engineering2689-18082021-01-01211010.1109/TQE.2021.30679969384301Cryogenic Floating-Gate CMOS Circuits for Quantum ControlJennifer Hasler0https://orcid.org/0000-0002-6866-3156Neil Dick1Kushal Das2https://orcid.org/0000-0003-1968-1347Brian Degnan3Alireza Moini4David Reilly5School of Electrical, and Computer Engineering (ECE), Georgia Institute of Technology, Atlanta, GA, USAMicrosoft Quantum Sydney, The University of Sydney, NSW, AustraliaMicrosoft Quantum Sydney, The University of Sydney, NSW, AustraliaWhite River Technologies, Newton, MA, USAMicrosoft Quantum Sydney, The University of Sydney, NSW, AustraliaMicrosoft Quantum Sydney, The University of Sydney, NSW, AustraliaVoltage biases are often required to bias Qubits, and yet applying a static bias requires separate chip wires, dramatically increasing the system complexity. An ideal approach would be having a nonvolatile digital or analog memory to avoid these issues. This article shows floating-gate (FG) structures could be used to set and forget potentials and tunnel barrier tuning as well as enable memory applications. It reports FG measurements at cryogenic temperatures (T = 4 K), enabling reprogrammable FG devices in cryogenic environments. Using a multipurpose FG test structure, measurements show the FG device and circuit operation as well as charge programming measurements based on electron tunneling and hot-electron injection at T = 4 K and T = 300 K. These results open applications in classical cryogenic computing, controlling quantum computation, and other cryogenic temperature applications.https://ieeexplore.ieee.org/document/9384301/Cryogenics electronicsfloating-gate devicesquantum computing |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Jennifer Hasler Neil Dick Kushal Das Brian Degnan Alireza Moini David Reilly |
| spellingShingle |
Jennifer Hasler Neil Dick Kushal Das Brian Degnan Alireza Moini David Reilly Cryogenic Floating-Gate CMOS Circuits for Quantum Control IEEE Transactions on Quantum Engineering Cryogenics electronics floating-gate devices quantum computing |
| author_facet |
Jennifer Hasler Neil Dick Kushal Das Brian Degnan Alireza Moini David Reilly |
| author_sort |
Jennifer Hasler |
| title |
Cryogenic Floating-Gate CMOS Circuits for Quantum Control |
| title_short |
Cryogenic Floating-Gate CMOS Circuits for Quantum Control |
| title_full |
Cryogenic Floating-Gate CMOS Circuits for Quantum Control |
| title_fullStr |
Cryogenic Floating-Gate CMOS Circuits for Quantum Control |
| title_full_unstemmed |
Cryogenic Floating-Gate CMOS Circuits for Quantum Control |
| title_sort |
cryogenic floating-gate cmos circuits for quantum control |
| publisher |
IEEE |
| series |
IEEE Transactions on Quantum Engineering |
| issn |
2689-1808 |
| publishDate |
2021-01-01 |
| description |
Voltage biases are often required to bias Qubits, and yet applying a static bias requires separate chip wires, dramatically increasing the system complexity. An ideal approach would be having a nonvolatile digital or analog memory to avoid these issues. This article shows floating-gate (FG) structures could be used to set and forget potentials and tunnel barrier tuning as well as enable memory applications. It reports FG measurements at cryogenic temperatures (T = 4 K), enabling reprogrammable FG devices in cryogenic environments. Using a multipurpose FG test structure, measurements show the FG device and circuit operation as well as charge programming measurements based on electron tunneling and hot-electron injection at T = 4 K and T = 300 K. These results open applications in classical cryogenic computing, controlling quantum computation, and other cryogenic temperature applications. |
| topic |
Cryogenics electronics floating-gate devices quantum computing |
| url |
https://ieeexplore.ieee.org/document/9384301/ |
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AT jenniferhasler cryogenicfloatinggatecmoscircuitsforquantumcontrol AT neildick cryogenicfloatinggatecmoscircuitsforquantumcontrol AT kushaldas cryogenicfloatinggatecmoscircuitsforquantumcontrol AT briandegnan cryogenicfloatinggatecmoscircuitsforquantumcontrol AT alirezamoini cryogenicfloatinggatecmoscircuitsforquantumcontrol AT davidreilly cryogenicfloatinggatecmoscircuitsforquantumcontrol |
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