ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition

ToF-SIMS 3D Analysis of Thin Films Deposited in High Aspect Ratio Structures via Atomic Layer Deposition and Chemical Vapor Deposition

For the analysis of thin films, with high aspect ratio (HAR) structures, time-of-flight secondary ion mass spectrometry (ToF-SIMS) overcomes several challenges in comparison to other frequently used techniques such as electron microscopy. The research presented herein focuses on two different kinds...

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Bibliographic Details
Main Authors: Alireza M. Kia, Nora Haufe, Sajjad Esmaeili, Clemens Mart, Mikko Utriainen, Riikka L. Puurunen, Wenke Weinreich
Format: Article
Language:English
Published: MDPI AG 2019-07-01
Series:Nanomaterials
Subjects:
ToF-SIMS 3D imaging
compositional depth profiling
high aspect ratio (HAR) structures
silicon doped hafnium oxide (HSO) ALD deposition
lateral high aspect ratio (LHAR)
ToF-SIMS analysis
Online Access:https://www.mdpi.com/2079-4991/9/7/1035

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