Contact-Area-Changeable CMP Conditioning for Enhancing Pad Lifetime
Chemical–mechanical polishing (CMP) is a process that planarizes semiconductor surfaces and is essential for the manufacture of highly integrated devices. In CMP, pad conditioning using a disk with diamond grit is adopted to maintain the surface roughness of the polishing pad and remove polishing de...
Main Authors: | Jungyu Son, Hyunseop Lee |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-04-01
|
Series: | Applied Sciences |
Subjects: | |
Online Access: | https://www.mdpi.com/2076-3417/11/8/3521 |
Similar Items
-
Dynamic Pad Surface Metrology Monitoring by Swing-Arm Chromatic Confocal System
by: Chao-Chang A. Chen, et al.
Published: (2021-12-01) -
Pad-Wafer and Brush-Wafer Contact Characterization in Planarization and Post-Planarization Processes
by: SUN, TING
Published: (2009) -
In Situ Metrology for Pad Surface Monitoring in CMP Using a Common-Path Phase-Shifting Interferometry: A Feasibility Study
by: Eun-Soo Kim, et al.
Published: (2021-07-01) -
Slurry Mean Residence Time Analysis and Pad-Wafer Contact Characterization in Chemical Mechanical Planarization
by: Mu, Yan, et al.
Published: (2016) -
Kinematic Prediction and Experimental Demonstration of Conditioning Process for Controlling the Profile Shape of a Chemical Mechanical Polishing Pad
by: Hanchul Cho, et al.
Published: (2021-05-01)