Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint

We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thi...

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Main Authors: Jannatul Susoma, Jouko Lahtinen, Maria Kim, Juha Riikonen, Harri Lipsanen
Format: Article
Language:English
Published: AIP Publishing LLC 2017-01-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4973918
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spelling doaj-3c128c414ad3487ea85c3f6505ef10922020-11-24T22:17:54ZengAIP Publishing LLCAIP Advances2158-32262017-01-0171015014015014-810.1063/1.4973918019701ADVCrystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprintJannatul Susoma0Jouko Lahtinen1Maria Kim2Juha Riikonen3Harri Lipsanen4Department of Micro and Nanosciences, Aalto University, P.O. Box 13500 Aalto, FI-00076 Espoo, FinlandDepartment of Applied Physics, Aalto University, P.O. Box 15100 Aalto, FI-00076 Espoo, FinlandDepartment of Micro and Nanosciences, Aalto University, P.O. Box 13500 Aalto, FI-00076 Espoo, FinlandDepartment of Micro and Nanosciences, Aalto University, P.O. Box 13500 Aalto, FI-00076 Espoo, FinlandDepartment of Micro and Nanosciences, Aalto University, P.O. Box 13500 Aalto, FI-00076 Espoo, FinlandWe have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.http://dx.doi.org/10.1063/1.4973918
collection DOAJ
language English
format Article
sources DOAJ
author Jannatul Susoma
Jouko Lahtinen
Maria Kim
Juha Riikonen
Harri Lipsanen
spellingShingle Jannatul Susoma
Jouko Lahtinen
Maria Kim
Juha Riikonen
Harri Lipsanen
Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint
AIP Advances
author_facet Jannatul Susoma
Jouko Lahtinen
Maria Kim
Juha Riikonen
Harri Lipsanen
author_sort Jannatul Susoma
title Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint
title_short Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint
title_full Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint
title_fullStr Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint
title_full_unstemmed Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint
title_sort crystal quality of two-dimensional gallium telluride and gallium selenide using raman fingerprint
publisher AIP Publishing LLC
series AIP Advances
issn 2158-3226
publishDate 2017-01-01
description We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.
url http://dx.doi.org/10.1063/1.4973918
work_keys_str_mv AT jannatulsusoma crystalqualityoftwodimensionalgalliumtellurideandgalliumselenideusingramanfingerprint
AT joukolahtinen crystalqualityoftwodimensionalgalliumtellurideandgalliumselenideusingramanfingerprint
AT mariakim crystalqualityoftwodimensionalgalliumtellurideandgalliumselenideusingramanfingerprint
AT juhariikonen crystalqualityoftwodimensionalgalliumtellurideandgalliumselenideusingramanfingerprint
AT harrilipsanen crystalqualityoftwodimensionalgalliumtellurideandgalliumselenideusingramanfingerprint
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