OBTAINING AND PROPERTIES OF AgInS2 FILMS

• Main Authors: M. A. Abdullaev, D. A. Alkhasova
• Format: Article
• Language: Russian
• Published: Kamerton 2016-07-01
• Series: Ûg Rossii: Èkologiâ, Razvitie
• Subjects: agins2 films; magnetron sputtering method; crystal lattice; hall effect; electrical conductivity; absorption coefficient; band gap
• Online Access: https://ecodag.elpub.ru/ugro/article/view/843
• ISSN: 1992-1098; 2413-0958

Aim. The aim is to obtain AgInS2 films and study their electrical and optical properties.Methods. The samples of thin AgInS2 films for measurement were obtained by the method of magnetron sputtering with direct current. The structure, phase and elemental composition were studied using DRON-2 X-ray diffractometer (СuKа - radiation) and the microscope LEO-1450 with EDS attachment for X-ray microanalysis. The optical transmittance and absorption were examined using MDR-2 monochromator in the wavelength range of 400-800 nm with the Keitley electrometer and FD-10G; we applied the spectral resolution of ± 1 meV. The electrical conductivity, Hall effect was measured by the four-point probe method with indium ohmic contacts. Measurements were carried out in the temperature range of 77-400 K.Findings. We obtained indium disulfide and silver films with the thickness of up to 1 μm on quartz substrates by magnetron sputtering. It is shown that increasing the substrate temperature to about 450 0С allows to obtain single phase film with a chalcopyrite structure with a band gap of 1.88 eV and high absorption coefficient (>104см-1).Conclusions. The possibility of obtaining films in a wide range of the electrical resistance and variation of the electrical parameters at constant stoichiometry is of interest for efficient technologies of phototransduction.