Capacitive Behavior of Single Gallium Oxide Nanobelt

Capacitive Behavior of Single Gallium Oxide Nanobelt

In this research, monocrystalline gallium oxide (Ga2O3) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga2O3 nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of...

Full description

Bibliographic Details
Main Authors: Haitao Cai, Hang Liu, Huichao Zhu, Pai Shao, Changmin Hou
Format: Article
Language:English
Published: MDPI AG 2015-08-01
Series:Materials
Subjects:
Ga2O3
nanobelt
capacitive behavior
impedance analysis
Online Access:http://www.mdpi.com/1996-1944/8/8/5244
Description
Summary:In this research, monocrystalline gallium oxide (Ga2O3) nanobelts were synthesized through oxidation of metal gallium at high temperature. An electronic device, based on an individual Ga2O3 nanobelt on Pt interdigital electrodes (IDEs), was fabricated to investigate the electrical characteristics of the Ga2O3 nanobelt in a dry atmosphere at room temperature. The current-voltage (I-V) and I/V-t characteristics show the capacitive behavior of the Ga2O3 nanobelt, indicating the existence of capacitive elements in the Pt/Ga2O3/Pt structure.
ISSN:1996-1944

Similar Items