Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy
The precise determination of carrier concentration in doped semiconductor materials and nanostructures is of high importance. Many parameters of an operational device are dependent on the proper carrier concentration or its distribution in both the active area as well as in the passive parts as the...
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doaj-3cd73565ea264e1198d3a27cd53b31002020-11-25T03:32:34ZengMDPI AGMaterials1996-19442020-07-01133109310910.3390/ma13143109Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical SpectroscopyMarcin Kurka0Michał Rygała1Grzegorz Sęk2Piotr Gutowski3Kamil Pierściński4Marcin Motyka5Laboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, PolandLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, PolandLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, PolandŁukasiewicz Research Network–Institute of Electron Technology, Al. Lotników 32/48, 02-668 Warszawa, PolandŁukasiewicz Research Network–Institute of Electron Technology, Al. Lotników 32/48, 02-668 Warszawa, PolandLaboratory for Optical Spectroscopy of Nanostructures, Department of Experimental Physics, Wrocław University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, PolandThe precise determination of carrier concentration in doped semiconductor materials and nanostructures is of high importance. Many parameters of an operational device are dependent on the proper carrier concentration or its distribution in both the active area as well as in the passive parts as the waveguide claddings. Determining those in a nondestructive manner is, on the one hand, demanded for the fabrication process efficiency, but on the other, challenging experimentally, especially for complex multilayer systems. Here, we present the results of carrier concentration determination in In<sub>0.53</sub>Ga<sub>0.47</sub>As layers, designed to be a material forming quantum cascade laser active areas, using a direct and contactless method utilizing the Berreman effect, and employing Fourier-transform infrared (FTIR) spectroscopy. The results allowed us to precisely determine the free carrier concentration versus changes in the nominal doping level and provide feedback regarding the technological process by indicating the temperature adjustment of the dopant source.https://www.mdpi.com/1996-1944/13/14/3109Berreman effectquantum cascade lasersgas sensingcarrier concentrationmid-infrared |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Marcin Kurka Michał Rygała Grzegorz Sęk Piotr Gutowski Kamil Pierściński Marcin Motyka |
spellingShingle |
Marcin Kurka Michał Rygała Grzegorz Sęk Piotr Gutowski Kamil Pierściński Marcin Motyka Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy Materials Berreman effect quantum cascade lasers gas sensing carrier concentration mid-infrared |
author_facet |
Marcin Kurka Michał Rygała Grzegorz Sęk Piotr Gutowski Kamil Pierściński Marcin Motyka |
author_sort |
Marcin Kurka |
title |
Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy |
title_short |
Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy |
title_full |
Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy |
title_fullStr |
Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy |
title_full_unstemmed |
Contactless Measurements of Carrier Concentrations in InGaAs Layers for Utilizing in InP-Based Quantum Cascade Lasers by Employing Optical Spectroscopy |
title_sort |
contactless measurements of carrier concentrations in ingaas layers for utilizing in inp-based quantum cascade lasers by employing optical spectroscopy |
publisher |
MDPI AG |
series |
Materials |
issn |
1996-1944 |
publishDate |
2020-07-01 |
description |
The precise determination of carrier concentration in doped semiconductor materials and nanostructures is of high importance. Many parameters of an operational device are dependent on the proper carrier concentration or its distribution in both the active area as well as in the passive parts as the waveguide claddings. Determining those in a nondestructive manner is, on the one hand, demanded for the fabrication process efficiency, but on the other, challenging experimentally, especially for complex multilayer systems. Here, we present the results of carrier concentration determination in In<sub>0.53</sub>Ga<sub>0.47</sub>As layers, designed to be a material forming quantum cascade laser active areas, using a direct and contactless method utilizing the Berreman effect, and employing Fourier-transform infrared (FTIR) spectroscopy. The results allowed us to precisely determine the free carrier concentration versus changes in the nominal doping level and provide feedback regarding the technological process by indicating the temperature adjustment of the dopant source. |
topic |
Berreman effect quantum cascade lasers gas sensing carrier concentration mid-infrared |
url |
https://www.mdpi.com/1996-1944/13/14/3109 |
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