Goos-Hänchen shift in silicene
Silicene has a rich phase diagram, which is due to the strong spin–orbit coupling induced by the buckled structure. In this work, the Goos-Hänchen (GH) shift of silicene in different phases is investigated. By employing the Kubo model of conductivity of silicene and angular spectrum analysis, the an...
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doaj-3da91adf04434764bb47667374e8dd1c2021-01-26T04:12:36ZengElsevierResults in Physics2211-37972021-01-0120103752Goos-Hänchen shift in siliceneHonghua Ma0Meijun Liu1Li Wen2Qianguang Li3Huan Chen4Xunong Yi5School of Physics and Electronic Information Engineering, Hubei Engineering University, Xiaogan 432000, ChinaSchool of Physics and Electronic Information Engineering, Hubei Engineering University, Xiaogan 432000, ChinaSchool of Physics and Electronic Information Engineering, Hubei Engineering University, Xiaogan 432000, ChinaSchool of Physics and Electronic Information Engineering, Hubei Engineering University, Xiaogan 432000, ChinaCorresponding authors.; School of Physics and Electronic Information Engineering, Hubei Engineering University, Xiaogan 432000, ChinaCorresponding authors.; School of Physics and Electronic Information Engineering, Hubei Engineering University, Xiaogan 432000, ChinaSilicene has a rich phase diagram, which is due to the strong spin–orbit coupling induced by the buckled structure. In this work, the Goos-Hänchen (GH) shift of silicene in different phases is investigated. By employing the Kubo model of conductivity of silicene and angular spectrum analysis, the analytical expression of GH shift is obtained. Based on the analytical results, a series of numerical simulations are carried out. The results demonstrate that one can acquire a large negative spatial GH shift at the pseudo-Brewster angle when the silicene is in metal phases. When the silicene is in nonmetallic states, the spatial GH shift become positive. For the angular GH shift, no matter what phase the silicene is in, it varies very rapidly and even changes the sign near the pseudo-Brewster angle. This allow us to manipulate the GH effect by controlling the applied external circularly polarized light electric field or magnetic field. We believe that these results are helpful for developing novel optoelectronic devices that base on the GH effect of silicene.http://www.sciencedirect.com/science/article/pii/S2211379720321653Goos-Hänchen shiftSilicenePhysical optics |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Honghua Ma Meijun Liu Li Wen Qianguang Li Huan Chen Xunong Yi |
spellingShingle |
Honghua Ma Meijun Liu Li Wen Qianguang Li Huan Chen Xunong Yi Goos-Hänchen shift in silicene Results in Physics Goos-Hänchen shift Silicene Physical optics |
author_facet |
Honghua Ma Meijun Liu Li Wen Qianguang Li Huan Chen Xunong Yi |
author_sort |
Honghua Ma |
title |
Goos-Hänchen shift in silicene |
title_short |
Goos-Hänchen shift in silicene |
title_full |
Goos-Hänchen shift in silicene |
title_fullStr |
Goos-Hänchen shift in silicene |
title_full_unstemmed |
Goos-Hänchen shift in silicene |
title_sort |
goos-hänchen shift in silicene |
publisher |
Elsevier |
series |
Results in Physics |
issn |
2211-3797 |
publishDate |
2021-01-01 |
description |
Silicene has a rich phase diagram, which is due to the strong spin–orbit coupling induced by the buckled structure. In this work, the Goos-Hänchen (GH) shift of silicene in different phases is investigated. By employing the Kubo model of conductivity of silicene and angular spectrum analysis, the analytical expression of GH shift is obtained. Based on the analytical results, a series of numerical simulations are carried out. The results demonstrate that one can acquire a large negative spatial GH shift at the pseudo-Brewster angle when the silicene is in metal phases. When the silicene is in nonmetallic states, the spatial GH shift become positive. For the angular GH shift, no matter what phase the silicene is in, it varies very rapidly and even changes the sign near the pseudo-Brewster angle. This allow us to manipulate the GH effect by controlling the applied external circularly polarized light electric field or magnetic field. We believe that these results are helpful for developing novel optoelectronic devices that base on the GH effect of silicene. |
topic |
Goos-Hänchen shift Silicene Physical optics |
url |
http://www.sciencedirect.com/science/article/pii/S2211379720321653 |
work_keys_str_mv |
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