Record thermopower found in an IrMn-based spintronic stack
Antiferromagnetic materials are potentially useful for spintronic applications. Here, the authors report high thermoelectric power value of 390 μV/K Seebeck coefficient in IrMn-based half magnetic tunnel junctions at room temperature.
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Nature Publishing Group
2020-04-01
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| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-020-15797-6 |
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doaj-3f0d3498d8f34d278a56988c3e76f4e02021-05-11T08:56:08ZengNature Publishing GroupNature Communications2041-17232020-04-011111710.1038/s41467-020-15797-6Record thermopower found in an IrMn-based spintronic stackSa Tu0Timothy Ziman1Guoqiang Yu2Caihua Wan3Junfeng Hu4Hao Wu5Hanchen Wang6Mengchao Liu7Chuanpu Liu8Chenyang Guo9Jianyu Zhang10Marco A. Cabero Z.11Youguang Zhang12Peng Gao13Song Liu14Dapeng Yu15Xiufeng Han16Ingrid Hallsteinsen17Dustin A. Gilbert18Mamoru Matsuo19Yuichi Ohnuma20Peter Wölfle21Kang L. Wang22Jean-Philippe Ansermet23Sadamichi Maekawa24Haiming Yu25Fert Beijing Institute, BDBC, School of Microelectronics, Beihang UniversityInstitut Laue-LangevinDepartment of Electrical Engineering, University of CaliforniaBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of SciencesFert Beijing Institute, BDBC, School of Microelectronics, Beihang UniversityDepartment of Electrical Engineering, University of CaliforniaFert Beijing Institute, BDBC, School of Microelectronics, Beihang UniversityElectron Microscopy Laboratory, School of Physics, Peking UniversityFert Beijing Institute, BDBC, School of Microelectronics, Beihang UniversityBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of SciencesFert Beijing Institute, BDBC, School of Microelectronics, Beihang UniversityFert Beijing Institute, BDBC, School of Microelectronics, Beihang UniversityFert Beijing Institute, BDBC, School of Microelectronics, Beihang UniversityElectron Microscopy Laboratory, School of Physics, Peking UniversityShenzhen Institute for Quantum Science and Engineering (SIQSE), and Department of Physics, Southern University of Science and Technology (SUSTech)Electron Microscopy Laboratory, School of Physics, Peking UniversityBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of SciencesDepartment of Electronic Systems, Norwegian University of Science and TechnologyMaterial Science and Engineering Department, University of TennesseeKavli Institute for Theoretical Sciences, University of Chinese Academy of SciencesKavli Institute for Theoretical Sciences, University of Chinese Academy of SciencesInstitute for Theory of Condensed Matter, Karlsruhe Institute of TechnologyDepartment of Electrical Engineering, University of CaliforniaInstitute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL)Kavli Institute for Theoretical Sciences, University of Chinese Academy of SciencesFert Beijing Institute, BDBC, School of Microelectronics, Beihang UniversityAntiferromagnetic materials are potentially useful for spintronic applications. Here, the authors report high thermoelectric power value of 390 μV/K Seebeck coefficient in IrMn-based half magnetic tunnel junctions at room temperature.https://doi.org/10.1038/s41467-020-15797-6 |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
Sa Tu Timothy Ziman Guoqiang Yu Caihua Wan Junfeng Hu Hao Wu Hanchen Wang Mengchao Liu Chuanpu Liu Chenyang Guo Jianyu Zhang Marco A. Cabero Z. Youguang Zhang Peng Gao Song Liu Dapeng Yu Xiufeng Han Ingrid Hallsteinsen Dustin A. Gilbert Mamoru Matsuo Yuichi Ohnuma Peter Wölfle Kang L. Wang Jean-Philippe Ansermet Sadamichi Maekawa Haiming Yu |
| spellingShingle |
Sa Tu Timothy Ziman Guoqiang Yu Caihua Wan Junfeng Hu Hao Wu Hanchen Wang Mengchao Liu Chuanpu Liu Chenyang Guo Jianyu Zhang Marco A. Cabero Z. Youguang Zhang Peng Gao Song Liu Dapeng Yu Xiufeng Han Ingrid Hallsteinsen Dustin A. Gilbert Mamoru Matsuo Yuichi Ohnuma Peter Wölfle Kang L. Wang Jean-Philippe Ansermet Sadamichi Maekawa Haiming Yu Record thermopower found in an IrMn-based spintronic stack Nature Communications |
| author_facet |
Sa Tu Timothy Ziman Guoqiang Yu Caihua Wan Junfeng Hu Hao Wu Hanchen Wang Mengchao Liu Chuanpu Liu Chenyang Guo Jianyu Zhang Marco A. Cabero Z. Youguang Zhang Peng Gao Song Liu Dapeng Yu Xiufeng Han Ingrid Hallsteinsen Dustin A. Gilbert Mamoru Matsuo Yuichi Ohnuma Peter Wölfle Kang L. Wang Jean-Philippe Ansermet Sadamichi Maekawa Haiming Yu |
| author_sort |
Sa Tu |
| title |
Record thermopower found in an IrMn-based spintronic stack |
| title_short |
Record thermopower found in an IrMn-based spintronic stack |
| title_full |
Record thermopower found in an IrMn-based spintronic stack |
| title_fullStr |
Record thermopower found in an IrMn-based spintronic stack |
| title_full_unstemmed |
Record thermopower found in an IrMn-based spintronic stack |
| title_sort |
record thermopower found in an irmn-based spintronic stack |
| publisher |
Nature Publishing Group |
| series |
Nature Communications |
| issn |
2041-1723 |
| publishDate |
2020-04-01 |
| description |
Antiferromagnetic materials are potentially useful for spintronic applications. Here, the authors report high thermoelectric power value of 390 μV/K Seebeck coefficient in IrMn-based half magnetic tunnel junctions at room temperature. |
| url |
https://doi.org/10.1038/s41467-020-15797-6 |
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