Low-damping ferromagnetic resonance in electron-beam patterned, high-Q vanadium tetracyanoethylene magnon cavities

Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabrication techniques. The low-loss (α = (3.98 ± 0.22) × 10−5...

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Main Authors: Andrew Franson, Na Zhu, Seth Kurfman, Michael Chilcote, Denis R. Candido, Kristen S. Buchanan, Michael E. Flatté, Hong X. Tang, Ezekiel Johnston-Halperin
Format: Article
Language:English
Published: AIP Publishing LLC 2019-12-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5131258
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spelling doaj-3f7ed60e54b844d2b705688883c4433a2020-11-25T01:30:39ZengAIP Publishing LLCAPL Materials2166-532X2019-12-01712121113121113-710.1063/1.5131258Low-damping ferromagnetic resonance in electron-beam patterned, high-Q vanadium tetracyanoethylene magnon cavitiesAndrew Franson0Na Zhu1Seth Kurfman2Michael Chilcote3Denis R. Candido4Kristen S. Buchanan5Michael E. Flatté6Hong X. Tang7Ezekiel Johnston-Halperin8Department of Physics, The Ohio State University, Columbus, Ohio 43210, USADepartment of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USADepartment of Physics, The Ohio State University, Columbus, Ohio 43210, USADepartment of Physics, The Ohio State University, Columbus, Ohio 43210, USADepartment of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242, USADepartment of Physics, Colorado State University, Fort Collins, Colorado 80523, USADepartment of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242, USADepartment of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USADepartment of Physics, The Ohio State University, Columbus, Ohio 43210, USAIntegrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabrication techniques. The low-loss (α = (3.98 ± 0.22) × 10−5), room-temperature ferrimagnetic coordination compound vanadium tetracyanoethylene (V[TCNE]x) is a promising new material for these applications that is potentially compatible with semiconductor processing. Here, we present the deposition, patterning, and characterization of V[TCNE]x thin films with lateral dimensions ranging from 1 μm to several millimeters. We employ electron-beam lithography and liftoff using an aluminum encapsulated poly(methyl methacrylate), poly(methyl methacrylate-methacrylic acid) copolymer bilayer [PMMA/P(MMA-MAA)] on sapphire and silicon. This process can be trivially extended to other common semiconductor substrates. Films patterned via this method maintain low-loss characteristics down to 25 μm with only a factor of 2 increase down to 5 μm. A rich structure of thickness and radially confined spin-wave modes reveals the quality of the patterned films. Further fitting, simulation, and analytic analysis provide an exchange stiffness, Aex = (2.2 ± 0.5) × 10−10erg/cm, as well as insights into the mode character and surface-spin pinning. Below a micron, the deposition is nonconformal, which leads to interesting and potentially useful changes in morphology. This work establishes the versatility of V[TCNE]x for applications requiring highly coherent magnetic excitations ranging from microwave communication to quantum information.http://dx.doi.org/10.1063/1.5131258
collection DOAJ
language English
format Article
sources DOAJ
author Andrew Franson
Na Zhu
Seth Kurfman
Michael Chilcote
Denis R. Candido
Kristen S. Buchanan
Michael E. Flatté
Hong X. Tang
Ezekiel Johnston-Halperin
spellingShingle Andrew Franson
Na Zhu
Seth Kurfman
Michael Chilcote
Denis R. Candido
Kristen S. Buchanan
Michael E. Flatté
Hong X. Tang
Ezekiel Johnston-Halperin
Low-damping ferromagnetic resonance in electron-beam patterned, high-Q vanadium tetracyanoethylene magnon cavities
APL Materials
author_facet Andrew Franson
Na Zhu
Seth Kurfman
Michael Chilcote
Denis R. Candido
Kristen S. Buchanan
Michael E. Flatté
Hong X. Tang
Ezekiel Johnston-Halperin
author_sort Andrew Franson
title Low-damping ferromagnetic resonance in electron-beam patterned, high-Q vanadium tetracyanoethylene magnon cavities
title_short Low-damping ferromagnetic resonance in electron-beam patterned, high-Q vanadium tetracyanoethylene magnon cavities
title_full Low-damping ferromagnetic resonance in electron-beam patterned, high-Q vanadium tetracyanoethylene magnon cavities
title_fullStr Low-damping ferromagnetic resonance in electron-beam patterned, high-Q vanadium tetracyanoethylene magnon cavities
title_full_unstemmed Low-damping ferromagnetic resonance in electron-beam patterned, high-Q vanadium tetracyanoethylene magnon cavities
title_sort low-damping ferromagnetic resonance in electron-beam patterned, high-q vanadium tetracyanoethylene magnon cavities
publisher AIP Publishing LLC
series APL Materials
issn 2166-532X
publishDate 2019-12-01
description Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabrication techniques. The low-loss (α = (3.98 ± 0.22) × 10−5), room-temperature ferrimagnetic coordination compound vanadium tetracyanoethylene (V[TCNE]x) is a promising new material for these applications that is potentially compatible with semiconductor processing. Here, we present the deposition, patterning, and characterization of V[TCNE]x thin films with lateral dimensions ranging from 1 μm to several millimeters. We employ electron-beam lithography and liftoff using an aluminum encapsulated poly(methyl methacrylate), poly(methyl methacrylate-methacrylic acid) copolymer bilayer [PMMA/P(MMA-MAA)] on sapphire and silicon. This process can be trivially extended to other common semiconductor substrates. Films patterned via this method maintain low-loss characteristics down to 25 μm with only a factor of 2 increase down to 5 μm. A rich structure of thickness and radially confined spin-wave modes reveals the quality of the patterned films. Further fitting, simulation, and analytic analysis provide an exchange stiffness, Aex = (2.2 ± 0.5) × 10−10erg/cm, as well as insights into the mode character and surface-spin pinning. Below a micron, the deposition is nonconformal, which leads to interesting and potentially useful changes in morphology. This work establishes the versatility of V[TCNE]x for applications requiring highly coherent magnetic excitations ranging from microwave communication to quantum information.
url http://dx.doi.org/10.1063/1.5131258
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