Low-damping ferromagnetic resonance in electron-beam patterned, high-Q vanadium tetracyanoethylene magnon cavities
Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabrication techniques. The low-loss (α = (3.98 ± 0.22) × 10−5...
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doaj-3f7ed60e54b844d2b705688883c4433a2020-11-25T01:30:39ZengAIP Publishing LLCAPL Materials2166-532X2019-12-01712121113121113-710.1063/1.5131258Low-damping ferromagnetic resonance in electron-beam patterned, high-Q vanadium tetracyanoethylene magnon cavitiesAndrew Franson0Na Zhu1Seth Kurfman2Michael Chilcote3Denis R. Candido4Kristen S. Buchanan5Michael E. Flatté6Hong X. Tang7Ezekiel Johnston-Halperin8Department of Physics, The Ohio State University, Columbus, Ohio 43210, USADepartment of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USADepartment of Physics, The Ohio State University, Columbus, Ohio 43210, USADepartment of Physics, The Ohio State University, Columbus, Ohio 43210, USADepartment of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242, USADepartment of Physics, Colorado State University, Fort Collins, Colorado 80523, USADepartment of Physics and Astronomy, University of Iowa, Iowa City, Iowa 52242, USADepartment of Electrical Engineering, Yale University, New Haven, Connecticut 06511, USADepartment of Physics, The Ohio State University, Columbus, Ohio 43210, USAIntegrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabrication techniques. The low-loss (α = (3.98 ± 0.22) × 10−5), room-temperature ferrimagnetic coordination compound vanadium tetracyanoethylene (V[TCNE]x) is a promising new material for these applications that is potentially compatible with semiconductor processing. Here, we present the deposition, patterning, and characterization of V[TCNE]x thin films with lateral dimensions ranging from 1 μm to several millimeters. We employ electron-beam lithography and liftoff using an aluminum encapsulated poly(methyl methacrylate), poly(methyl methacrylate-methacrylic acid) copolymer bilayer [PMMA/P(MMA-MAA)] on sapphire and silicon. This process can be trivially extended to other common semiconductor substrates. Films patterned via this method maintain low-loss characteristics down to 25 μm with only a factor of 2 increase down to 5 μm. A rich structure of thickness and radially confined spin-wave modes reveals the quality of the patterned films. Further fitting, simulation, and analytic analysis provide an exchange stiffness, Aex = (2.2 ± 0.5) × 10−10erg/cm, as well as insights into the mode character and surface-spin pinning. Below a micron, the deposition is nonconformal, which leads to interesting and potentially useful changes in morphology. This work establishes the versatility of V[TCNE]x for applications requiring highly coherent magnetic excitations ranging from microwave communication to quantum information.http://dx.doi.org/10.1063/1.5131258 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Andrew Franson Na Zhu Seth Kurfman Michael Chilcote Denis R. Candido Kristen S. Buchanan Michael E. Flatté Hong X. Tang Ezekiel Johnston-Halperin |
spellingShingle |
Andrew Franson Na Zhu Seth Kurfman Michael Chilcote Denis R. Candido Kristen S. Buchanan Michael E. Flatté Hong X. Tang Ezekiel Johnston-Halperin Low-damping ferromagnetic resonance in electron-beam patterned, high-Q vanadium tetracyanoethylene magnon cavities APL Materials |
author_facet |
Andrew Franson Na Zhu Seth Kurfman Michael Chilcote Denis R. Candido Kristen S. Buchanan Michael E. Flatté Hong X. Tang Ezekiel Johnston-Halperin |
author_sort |
Andrew Franson |
title |
Low-damping ferromagnetic resonance in electron-beam patterned, high-Q vanadium tetracyanoethylene magnon cavities |
title_short |
Low-damping ferromagnetic resonance in electron-beam patterned, high-Q vanadium tetracyanoethylene magnon cavities |
title_full |
Low-damping ferromagnetic resonance in electron-beam patterned, high-Q vanadium tetracyanoethylene magnon cavities |
title_fullStr |
Low-damping ferromagnetic resonance in electron-beam patterned, high-Q vanadium tetracyanoethylene magnon cavities |
title_full_unstemmed |
Low-damping ferromagnetic resonance in electron-beam patterned, high-Q vanadium tetracyanoethylene magnon cavities |
title_sort |
low-damping ferromagnetic resonance in electron-beam patterned, high-q vanadium tetracyanoethylene magnon cavities |
publisher |
AIP Publishing LLC |
series |
APL Materials |
issn |
2166-532X |
publishDate |
2019-12-01 |
description |
Integrating patterned, low-loss magnetic materials into microwave devices and circuits presents many challenges due to the specific conditions that are required to grow ferrite materials, driving the need for flip-chip and other indirect fabrication techniques. The low-loss (α = (3.98 ± 0.22) × 10−5), room-temperature ferrimagnetic coordination compound vanadium tetracyanoethylene (V[TCNE]x) is a promising new material for these applications that is potentially compatible with semiconductor processing. Here, we present the deposition, patterning, and characterization of V[TCNE]x thin films with lateral dimensions ranging from 1 μm to several millimeters. We employ electron-beam lithography and liftoff using an aluminum encapsulated poly(methyl methacrylate), poly(methyl methacrylate-methacrylic acid) copolymer bilayer [PMMA/P(MMA-MAA)] on sapphire and silicon. This process can be trivially extended to other common semiconductor substrates. Films patterned via this method maintain low-loss characteristics down to 25 μm with only a factor of 2 increase down to 5 μm. A rich structure of thickness and radially confined spin-wave modes reveals the quality of the patterned films. Further fitting, simulation, and analytic analysis provide an exchange stiffness, Aex = (2.2 ± 0.5) × 10−10erg/cm, as well as insights into the mode character and surface-spin pinning. Below a micron, the deposition is nonconformal, which leads to interesting and potentially useful changes in morphology. This work establishes the versatility of V[TCNE]x for applications requiring highly coherent magnetic excitations ranging from microwave communication to quantum information. |
url |
http://dx.doi.org/10.1063/1.5131258 |
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