Coherent magnetic semiconductor nanodot arrays

<p>Abstract</p> <p>In searching appropriate candidates of magnetic semiconductors compatible with mainstream Si technology for future spintronic devices, extensive attention has been focused on Mn-doped Ge magnetic semiconductors. Up to now, lack of reliable methods to obtain high-...

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Main Authors: Xiu Faxian, Zhou Yi, Wang Kang, Beyermann Ward, Wang Yong, Wang Ya, Zou Jin
Format: Article
Language:English
Published: SpringerOpen 2011-01-01
Series:Nanoscale Research Letters
Online Access:http://www.nanoscalereslett.com/content/6/1/134
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spelling doaj-40deadb1cc864f808dd6bf8bdc83122e2020-11-25T01:49:58ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-0161134Coherent magnetic semiconductor nanodot arraysXiu FaxianZhou YiWang KangBeyermann WardWang YongWang YaZou Jin<p>Abstract</p> <p>In searching appropriate candidates of magnetic semiconductors compatible with mainstream Si technology for future spintronic devices, extensive attention has been focused on Mn-doped Ge magnetic semiconductors. Up to now, lack of reliable methods to obtain high-quality MnGe nanostructures with a desired shape and a good controllability has been a barrier to make these materials practically applicable for spintronic devices. Here, we report, for the first time, an innovative growth approach to produce self-assembled and coherent magnetic MnGe nanodot arrays with an excellent reproducibility. Magnetotransport experiments reveal that the nanodot arrays possess giant magneto-resistance associated with geometrical effects. The discovery of the MnGe nanodot arrays paves the way towards next-generation high-density magnetic memories and spintronic devices with low-power dissipation.</p> http://www.nanoscalereslett.com/content/6/1/134
collection DOAJ
language English
format Article
sources DOAJ
author Xiu Faxian
Zhou Yi
Wang Kang
Beyermann Ward
Wang Yong
Wang Ya
Zou Jin
spellingShingle Xiu Faxian
Zhou Yi
Wang Kang
Beyermann Ward
Wang Yong
Wang Ya
Zou Jin
Coherent magnetic semiconductor nanodot arrays
Nanoscale Research Letters
author_facet Xiu Faxian
Zhou Yi
Wang Kang
Beyermann Ward
Wang Yong
Wang Ya
Zou Jin
author_sort Xiu Faxian
title Coherent magnetic semiconductor nanodot arrays
title_short Coherent magnetic semiconductor nanodot arrays
title_full Coherent magnetic semiconductor nanodot arrays
title_fullStr Coherent magnetic semiconductor nanodot arrays
title_full_unstemmed Coherent magnetic semiconductor nanodot arrays
title_sort coherent magnetic semiconductor nanodot arrays
publisher SpringerOpen
series Nanoscale Research Letters
issn 1931-7573
1556-276X
publishDate 2011-01-01
description <p>Abstract</p> <p>In searching appropriate candidates of magnetic semiconductors compatible with mainstream Si technology for future spintronic devices, extensive attention has been focused on Mn-doped Ge magnetic semiconductors. Up to now, lack of reliable methods to obtain high-quality MnGe nanostructures with a desired shape and a good controllability has been a barrier to make these materials practically applicable for spintronic devices. Here, we report, for the first time, an innovative growth approach to produce self-assembled and coherent magnetic MnGe nanodot arrays with an excellent reproducibility. Magnetotransport experiments reveal that the nanodot arrays possess giant magneto-resistance associated with geometrical effects. The discovery of the MnGe nanodot arrays paves the way towards next-generation high-density magnetic memories and spintronic devices with low-power dissipation.</p>
url http://www.nanoscalereslett.com/content/6/1/134
work_keys_str_mv AT xiufaxian coherentmagneticsemiconductornanodotarrays
AT zhouyi coherentmagneticsemiconductornanodotarrays
AT wangkang coherentmagneticsemiconductornanodotarrays
AT beyermannward coherentmagneticsemiconductornanodotarrays
AT wangyong coherentmagneticsemiconductornanodotarrays
AT wangya coherentmagneticsemiconductornanodotarrays
AT zoujin coherentmagneticsemiconductornanodotarrays
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