Coherent magnetic semiconductor nanodot arrays
<p>Abstract</p> <p>In searching appropriate candidates of magnetic semiconductors compatible with mainstream Si technology for future spintronic devices, extensive attention has been focused on Mn-doped Ge magnetic semiconductors. Up to now, lack of reliable methods to obtain high-...
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2011-01-01
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doaj-40deadb1cc864f808dd6bf8bdc83122e2020-11-25T01:49:58ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2011-01-0161134Coherent magnetic semiconductor nanodot arraysXiu FaxianZhou YiWang KangBeyermann WardWang YongWang YaZou Jin<p>Abstract</p> <p>In searching appropriate candidates of magnetic semiconductors compatible with mainstream Si technology for future spintronic devices, extensive attention has been focused on Mn-doped Ge magnetic semiconductors. Up to now, lack of reliable methods to obtain high-quality MnGe nanostructures with a desired shape and a good controllability has been a barrier to make these materials practically applicable for spintronic devices. Here, we report, for the first time, an innovative growth approach to produce self-assembled and coherent magnetic MnGe nanodot arrays with an excellent reproducibility. Magnetotransport experiments reveal that the nanodot arrays possess giant magneto-resistance associated with geometrical effects. The discovery of the MnGe nanodot arrays paves the way towards next-generation high-density magnetic memories and spintronic devices with low-power dissipation.</p> http://www.nanoscalereslett.com/content/6/1/134 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Xiu Faxian Zhou Yi Wang Kang Beyermann Ward Wang Yong Wang Ya Zou Jin |
spellingShingle |
Xiu Faxian Zhou Yi Wang Kang Beyermann Ward Wang Yong Wang Ya Zou Jin Coherent magnetic semiconductor nanodot arrays Nanoscale Research Letters |
author_facet |
Xiu Faxian Zhou Yi Wang Kang Beyermann Ward Wang Yong Wang Ya Zou Jin |
author_sort |
Xiu Faxian |
title |
Coherent magnetic semiconductor nanodot arrays |
title_short |
Coherent magnetic semiconductor nanodot arrays |
title_full |
Coherent magnetic semiconductor nanodot arrays |
title_fullStr |
Coherent magnetic semiconductor nanodot arrays |
title_full_unstemmed |
Coherent magnetic semiconductor nanodot arrays |
title_sort |
coherent magnetic semiconductor nanodot arrays |
publisher |
SpringerOpen |
series |
Nanoscale Research Letters |
issn |
1931-7573 1556-276X |
publishDate |
2011-01-01 |
description |
<p>Abstract</p> <p>In searching appropriate candidates of magnetic semiconductors compatible with mainstream Si technology for future spintronic devices, extensive attention has been focused on Mn-doped Ge magnetic semiconductors. Up to now, lack of reliable methods to obtain high-quality MnGe nanostructures with a desired shape and a good controllability has been a barrier to make these materials practically applicable for spintronic devices. Here, we report, for the first time, an innovative growth approach to produce self-assembled and coherent magnetic MnGe nanodot arrays with an excellent reproducibility. Magnetotransport experiments reveal that the nanodot arrays possess giant magneto-resistance associated with geometrical effects. The discovery of the MnGe nanodot arrays paves the way towards next-generation high-density magnetic memories and spintronic devices with low-power dissipation.</p> |
url |
http://www.nanoscalereslett.com/content/6/1/134 |
work_keys_str_mv |
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