Impact of Process-Induced Variations on Negative Capacitance Junctionless Nanowire FET

Impact of Process-Induced Variations on Negative Capacitance Junctionless Nanowire FET

In this study, the impact of the negative capacitance (NC) effect on process-induced variations, such as work function variation (WFV), random dopant fluctuation (RDF), and line edge roughness (LER), was investigated and compared to those of the baseline junctionless nanowire FET (JL-NWFET) in both...

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Bibliographic Details
Main Authors:	Yejoo Choi, Jinwoong Lee, Jaehyuk Lim, Seungjun Moon, Changhwan Shin
Format:	Article
Language:	English
Published:	MDPI AG 2021-08-01
Series:	Electronics
Subjects:	random variation line edge roughness (LER) random dopant fluctuation (RDF) work function variation (WFV) negative capacitance (NC)
Online Access:	https://www.mdpi.com/2079-9292/10/16/1899

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