Determination of the Complex Dielectric Function of Ion-Implanted Amorphous Germanium by Spectroscopic Ellipsometry
Accurate reference dielectric functions play an important role in the research and development of optical materials. Libraries of such data are required in many applications in which amorphous semiconductors are gaining increasing interest, such as in integrated optics, optoelectronics or photovolta...
Main Authors: | , , , , , , , , |
---|---|
Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-05-01
|
Series: | Coatings |
Subjects: | |
Online Access: | https://www.mdpi.com/2079-6412/10/5/480 |
id |
doaj-43b610f85318432cb63aa36a41058044 |
---|---|
record_format |
Article |
spelling |
doaj-43b610f85318432cb63aa36a410580442020-11-25T03:27:08ZengMDPI AGCoatings2079-64122020-05-011048048010.3390/coatings10050480Determination of the Complex Dielectric Function of Ion-Implanted Amorphous Germanium by Spectroscopic EllipsometryTivadar Lohner0Edit Szilágyi1Zsolt Zolnai2Attila Németh3Zsolt Fogarassy4Levente Illés5Endre Kótai6Peter Petrik7Miklós Fried8Institute of Technical Physics and Materials Science, Centre for Energy Research, Konkoly Thege Miklós Rd. 29-33, H-1121 Budapest, HungaryInstitute for Particle and Nuclear Physics, Wigner Research Centre for Physics, Konkoly Thege Miklós Rd. 29-33, H-1121 Budapest, HungaryInstitute of Technical Physics and Materials Science, Centre for Energy Research, Konkoly Thege Miklós Rd. 29-33, H-1121 Budapest, HungaryInstitute for Particle and Nuclear Physics, Wigner Research Centre for Physics, Konkoly Thege Miklós Rd. 29-33, H-1121 Budapest, HungaryInstitute of Technical Physics and Materials Science, Centre for Energy Research, Konkoly Thege Miklós Rd. 29-33, H-1121 Budapest, HungaryInstitute of Technical Physics and Materials Science, Centre for Energy Research, Konkoly Thege Miklós Rd. 29-33, H-1121 Budapest, HungaryInstitute for Particle and Nuclear Physics, Wigner Research Centre for Physics, Konkoly Thege Miklós Rd. 29-33, H-1121 Budapest, HungaryInstitute of Technical Physics and Materials Science, Centre for Energy Research, Konkoly Thege Miklós Rd. 29-33, H-1121 Budapest, HungaryInstitute of Technical Physics and Materials Science, Centre for Energy Research, Konkoly Thege Miklós Rd. 29-33, H-1121 Budapest, HungaryAccurate reference dielectric functions play an important role in the research and development of optical materials. Libraries of such data are required in many applications in which amorphous semiconductors are gaining increasing interest, such as in integrated optics, optoelectronics or photovoltaics. The preparation of materials of high optical quality in a reproducible way is crucial in device fabrication. In this work, amorphous Ge (a-Ge) was created in single-crystalline Ge by ion implantation. It was shown that high optical density is available when implanting low-mass Al ions using a dual-energy approach. The optical properties were measured by multiple angle of incidence spectroscopic ellipsometry identifying the Cody-Lorentz dispersion model as the most suitable, that was capable of describing the dielectric function by a few parameters in the wavelength range from 210 to 1690 nm. The results of the optical measurements were consistent with the high material quality revealed by complementary Rutherford backscattering spectrometry and cross-sectional electron microscopy measurements, including the agreement of the layer thickness within experimental uncertainty.https://www.mdpi.com/2079-6412/10/5/480germaniumoptical propertiesdielectric functionthin film characterizationsemiconductorspectroscopic ellipsometry |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Tivadar Lohner Edit Szilágyi Zsolt Zolnai Attila Németh Zsolt Fogarassy Levente Illés Endre Kótai Peter Petrik Miklós Fried |
spellingShingle |
Tivadar Lohner Edit Szilágyi Zsolt Zolnai Attila Németh Zsolt Fogarassy Levente Illés Endre Kótai Peter Petrik Miklós Fried Determination of the Complex Dielectric Function of Ion-Implanted Amorphous Germanium by Spectroscopic Ellipsometry Coatings germanium optical properties dielectric function thin film characterization semiconductor spectroscopic ellipsometry |
author_facet |
Tivadar Lohner Edit Szilágyi Zsolt Zolnai Attila Németh Zsolt Fogarassy Levente Illés Endre Kótai Peter Petrik Miklós Fried |
author_sort |
Tivadar Lohner |
title |
Determination of the Complex Dielectric Function of Ion-Implanted Amorphous Germanium by Spectroscopic Ellipsometry |
title_short |
Determination of the Complex Dielectric Function of Ion-Implanted Amorphous Germanium by Spectroscopic Ellipsometry |
title_full |
Determination of the Complex Dielectric Function of Ion-Implanted Amorphous Germanium by Spectroscopic Ellipsometry |
title_fullStr |
Determination of the Complex Dielectric Function of Ion-Implanted Amorphous Germanium by Spectroscopic Ellipsometry |
title_full_unstemmed |
Determination of the Complex Dielectric Function of Ion-Implanted Amorphous Germanium by Spectroscopic Ellipsometry |
title_sort |
determination of the complex dielectric function of ion-implanted amorphous germanium by spectroscopic ellipsometry |
publisher |
MDPI AG |
series |
Coatings |
issn |
2079-6412 |
publishDate |
2020-05-01 |
description |
Accurate reference dielectric functions play an important role in the research and development of optical materials. Libraries of such data are required in many applications in which amorphous semiconductors are gaining increasing interest, such as in integrated optics, optoelectronics or photovoltaics. The preparation of materials of high optical quality in a reproducible way is crucial in device fabrication. In this work, amorphous Ge (a-Ge) was created in single-crystalline Ge by ion implantation. It was shown that high optical density is available when implanting low-mass Al ions using a dual-energy approach. The optical properties were measured by multiple angle of incidence spectroscopic ellipsometry identifying the Cody-Lorentz dispersion model as the most suitable, that was capable of describing the dielectric function by a few parameters in the wavelength range from 210 to 1690 nm. The results of the optical measurements were consistent with the high material quality revealed by complementary Rutherford backscattering spectrometry and cross-sectional electron microscopy measurements, including the agreement of the layer thickness within experimental uncertainty. |
topic |
germanium optical properties dielectric function thin film characterization semiconductor spectroscopic ellipsometry |
url |
https://www.mdpi.com/2079-6412/10/5/480 |
work_keys_str_mv |
AT tivadarlohner determinationofthecomplexdielectricfunctionofionimplantedamorphousgermaniumbyspectroscopicellipsometry AT editszilagyi determinationofthecomplexdielectricfunctionofionimplantedamorphousgermaniumbyspectroscopicellipsometry AT zsoltzolnai determinationofthecomplexdielectricfunctionofionimplantedamorphousgermaniumbyspectroscopicellipsometry AT attilanemeth determinationofthecomplexdielectricfunctionofionimplantedamorphousgermaniumbyspectroscopicellipsometry AT zsoltfogarassy determinationofthecomplexdielectricfunctionofionimplantedamorphousgermaniumbyspectroscopicellipsometry AT leventeilles determinationofthecomplexdielectricfunctionofionimplantedamorphousgermaniumbyspectroscopicellipsometry AT endrekotai determinationofthecomplexdielectricfunctionofionimplantedamorphousgermaniumbyspectroscopicellipsometry AT peterpetrik determinationofthecomplexdielectricfunctionofionimplantedamorphousgermaniumbyspectroscopicellipsometry AT miklosfried determinationofthecomplexdielectricfunctionofionimplantedamorphousgermaniumbyspectroscopicellipsometry |
_version_ |
1724589284297539584 |