Temperature-Dependent Photoluminescence Property of Self-Assembly ZnO Nanowires via Chemical Vapor Deposition Combined with Hydrothermal Pretreatment

Vertically aligned ZnO nanowires with high aspect ratio were prepared by chemical vapor deposition on Si substrate, which had been catalyzed by the polar plane in [0001] direction of ZnO nanorods prepared by the hydrothermal method. Morphology and structure characterizations showed that the as-grown...

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Main Authors: Zongxiao Li, Xiangli Liu
Format: Article
Language:English
Published: MDPI AG 2015-11-01
Series:Materials
Subjects:
Online Access:http://www.mdpi.com/1996-1944/8/11/5393
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spelling doaj-466477931e8b4a6ba81f498043c535f92020-11-24T22:13:26ZengMDPI AGMaterials1996-19442015-11-018117598760310.3390/ma8115393ma8115393Temperature-Dependent Photoluminescence Property of Self-Assembly ZnO Nanowires via Chemical Vapor Deposition Combined with Hydrothermal PretreatmentZongxiao Li0Xiangli Liu1Shenzhen Key Laboratory of Advanced Materials, Department of Materials Science and Engineering, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, ChinaShenzhen Key Laboratory of Advanced Materials, Department of Materials Science and Engineering, Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055, ChinaVertically aligned ZnO nanowires with high aspect ratio were prepared by chemical vapor deposition on Si substrate, which had been catalyzed by the polar plane in [0001] direction of ZnO nanorods prepared by the hydrothermal method. Morphology and structure characterizations showed that the as-grown nanowires had the single-crystal hexagonal wurtzite structure with a [0001] growth direction. Energy Dispersive X-ray (EDX) measurement indicated the as-grown ZnO nanowires had a good deal of oxygen vacancies owing to the high operation temperature. Temperature-dependent photoluminescence measurement revealed that the peak of near-band-edge emission shifted from 380 to 387 nm with the increase of temperature from 150 to 300 K. The high intensity of the green peak at 525 nm highlighted the potential application in visible light emitting diodes.http://www.mdpi.com/1996-1944/8/11/5393zinc oxidenanowireshydrothermalchemical vapor depositioncrystal growthluminescence
collection DOAJ
language English
format Article
sources DOAJ
author Zongxiao Li
Xiangli Liu
spellingShingle Zongxiao Li
Xiangli Liu
Temperature-Dependent Photoluminescence Property of Self-Assembly ZnO Nanowires via Chemical Vapor Deposition Combined with Hydrothermal Pretreatment
Materials
zinc oxide
nanowires
hydrothermal
chemical vapor deposition
crystal growth
luminescence
author_facet Zongxiao Li
Xiangli Liu
author_sort Zongxiao Li
title Temperature-Dependent Photoluminescence Property of Self-Assembly ZnO Nanowires via Chemical Vapor Deposition Combined with Hydrothermal Pretreatment
title_short Temperature-Dependent Photoluminescence Property of Self-Assembly ZnO Nanowires via Chemical Vapor Deposition Combined with Hydrothermal Pretreatment
title_full Temperature-Dependent Photoluminescence Property of Self-Assembly ZnO Nanowires via Chemical Vapor Deposition Combined with Hydrothermal Pretreatment
title_fullStr Temperature-Dependent Photoluminescence Property of Self-Assembly ZnO Nanowires via Chemical Vapor Deposition Combined with Hydrothermal Pretreatment
title_full_unstemmed Temperature-Dependent Photoluminescence Property of Self-Assembly ZnO Nanowires via Chemical Vapor Deposition Combined with Hydrothermal Pretreatment
title_sort temperature-dependent photoluminescence property of self-assembly zno nanowires via chemical vapor deposition combined with hydrothermal pretreatment
publisher MDPI AG
series Materials
issn 1996-1944
publishDate 2015-11-01
description Vertically aligned ZnO nanowires with high aspect ratio were prepared by chemical vapor deposition on Si substrate, which had been catalyzed by the polar plane in [0001] direction of ZnO nanorods prepared by the hydrothermal method. Morphology and structure characterizations showed that the as-grown nanowires had the single-crystal hexagonal wurtzite structure with a [0001] growth direction. Energy Dispersive X-ray (EDX) measurement indicated the as-grown ZnO nanowires had a good deal of oxygen vacancies owing to the high operation temperature. Temperature-dependent photoluminescence measurement revealed that the peak of near-band-edge emission shifted from 380 to 387 nm with the increase of temperature from 150 to 300 K. The high intensity of the green peak at 525 nm highlighted the potential application in visible light emitting diodes.
topic zinc oxide
nanowires
hydrothermal
chemical vapor deposition
crystal growth
luminescence
url http://www.mdpi.com/1996-1944/8/11/5393
work_keys_str_mv AT zongxiaoli temperaturedependentphotoluminescencepropertyofselfassemblyznonanowiresviachemicalvapordepositioncombinedwithhydrothermalpretreatment
AT xiangliliu temperaturedependentphotoluminescencepropertyofselfassemblyznonanowiresviachemicalvapordepositioncombinedwithhydrothermalpretreatment
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