A Monolithic High-G SOI-MEMS Accelerometer for Measuring Projectile Launch and Flight Accelerations
Analog Devices (ADI) has designed and fabricated a monolithic high-g acceleration sensor (ADXSTC3-HG) fabricated with the ADI silicon-on-insulator micro-electro-mechanical system (SOI-MEMS) process. The SOI-MEMS sensor structure has a thickness of 10 um, allowing for the design of inertial sensors w...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2006-01-01
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| Series: | Shock and Vibration |
| Online Access: | http://dx.doi.org/10.1155/2006/793564 |
| Summary: | Analog Devices (ADI) has designed and fabricated a monolithic high-g acceleration sensor (ADXSTC3-HG) fabricated with the ADI silicon-on-insulator micro-electro-mechanical system (SOI-MEMS) process. The SOI-MEMS sensor structure has a thickness of 10 um, allowing for the design of inertial sensors with excellent cross-axis rejection. The high-g accelerometer discussed in this paper was designed to measure in-plane acceleration to 10,000 g while subjected to 100,000 g in the orthogonal axes. These requirements were intended to meet Army munition applications. The monolithic sensor was packaged in an 8-pin leadless chip carrier (LCC-8) and was successfully demonstrated by the US Army Research Laboratory (ARL) as part of an inertial measurement unit during an instrumented flight experiment of artillery projectiles launched at 15,000 g. |
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| ISSN: | 1070-9622 1875-9203 |