Transport Phenomena In Single Crystals Tl1−XIn1−XGeXSe2 (x=0.1, 0.2)
Temperature dependences of electroconductivity for single crystals Tl1−xIn1−xGexSe2 were analyzed. It was established an occurrence of thermoactivated states within the temperature range 100-300 K. The conductivity is formed by delocalized carriers within the conductivity band and the jumping conduc...
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doaj-48814127afe641339d5e7208b35ce79a2020-11-25T03:28:23ZengPolish Academy of SciencesArchives of Metallurgy and Materials2300-19092015-09-016032025202810.1515/amm-2015-0343amm-2015-0343Transport Phenomena In Single Crystals Tl1−XIn1−XGeXSe2 (x=0.1, 0.2)Zamurueva O.V.0Myronchuk G.L.1Oźga K.2Szota M.3El-Naggar A.M.4Albassam A.A.5Parasyuk O.V.6Piskach L.V.7Kityk I.V.8 EASTERN EUROPEAN NATIONAL UNIVERSITY, DEPARTMENT OF SOLID STATE PHYSICS, 13 VOLI AVE., 43025 LUTSK, UKRAINE EASTERN EUROPEAN NATIONAL UNIVERSITY, DEPARTMENT OF SOLID STATE PHYSICS, 13 VOLI AVE., 43025 LUTSK, UKRAINE CZESTOCHOWA UNIVERSITY OF TECHNOLOGY, INSTITUTE OF ELECTRONIC AND CONTROL SYSTEM, 17 ARMII KRAJOWEJ AV., 42-200 CZESTOCHOWA, POLAND CZESTOCHOWA UNIVERSITY OF TECHNOLOGY, INSTITUTE OF MATERIAL SCIENCE ENGINEERING, 19 ARMII KRAJOWEJ AV., 42-200 CZESTOCHOWA, POLAND RESEARCH CHAIR OF EXPLOITATION OF RENEWABLE ENERGY APPLICATIONS IN SAUDI ARABIA, PHYSICS RESEARCH CHAIR OF EXPLOITATION OF RENEWABLE ENERGY APPLICATIONS IN SAUDI ARABIA, PHYSICS EASTERN EUROPEAN NATIONAL UNIVERSITY, DEPARTMENT OF INORGANIC AND ORGANIC CHEMISTRY, , 13 VOLI AVE., 43025 LUTSK, UKRAINE EASTERN EUROPEAN NATIONAL UNIVERSITY, DEPARTMENT OF INORGANIC AND ORGANIC CHEMISTRY, , 13 VOLI AVE., 43025 LUTSK, UKRAINE CZESTOCHOWA UNIVERSITY OF TECHNOLOGY, INSTITUTE OF ELECTRONIC AND CONTROL SYSTEM, 17 ARMII KRAJOWEJ AV., 42-200 CZESTOCHOWA, POLANDTemperature dependences of electroconductivity for single crystals Tl1−xIn1−xGexSe2 were analyzed. It was established an occurrence of thermoactivated states within the temperature range 100-300 K. The conductivity is formed by delocalized carriers within the conductivity band and the jumping conductivity over the localized states which are situated in the narrow localized states near the Fermi level. Following the performed data the activation energy was evaluated with accuracy up to 0.02 eV. The density of the localized states as well as the distribution of the energy over the mentioned states was evaluated. Additionally the average distance between the localized states is evaluated at different temperatures.http://www.degruyter.com/view/j/amm.2015.60.issue-3/amm-2015-0343/amm-2015-0343.xml?format=INTTl1−xIn1−xGexSe2 single crystalchalcogenide crystalstransport featuresphotoinduced birefringenceelectroconductivity mechanismsUrbach rule |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Zamurueva O.V. Myronchuk G.L. Oźga K. Szota M. El-Naggar A.M. Albassam A.A. Parasyuk O.V. Piskach L.V. Kityk I.V. |
spellingShingle |
Zamurueva O.V. Myronchuk G.L. Oźga K. Szota M. El-Naggar A.M. Albassam A.A. Parasyuk O.V. Piskach L.V. Kityk I.V. Transport Phenomena In Single Crystals Tl1−XIn1−XGeXSe2 (x=0.1, 0.2) Archives of Metallurgy and Materials Tl1−xIn1−xGexSe2 single crystal chalcogenide crystals transport features photoinduced birefringence electroconductivity mechanisms Urbach rule |
author_facet |
Zamurueva O.V. Myronchuk G.L. Oźga K. Szota M. El-Naggar A.M. Albassam A.A. Parasyuk O.V. Piskach L.V. Kityk I.V. |
author_sort |
Zamurueva O.V. |
title |
Transport Phenomena In Single Crystals Tl1−XIn1−XGeXSe2 (x=0.1, 0.2) |
title_short |
Transport Phenomena In Single Crystals Tl1−XIn1−XGeXSe2 (x=0.1, 0.2) |
title_full |
Transport Phenomena In Single Crystals Tl1−XIn1−XGeXSe2 (x=0.1, 0.2) |
title_fullStr |
Transport Phenomena In Single Crystals Tl1−XIn1−XGeXSe2 (x=0.1, 0.2) |
title_full_unstemmed |
Transport Phenomena In Single Crystals Tl1−XIn1−XGeXSe2 (x=0.1, 0.2) |
title_sort |
transport phenomena in single crystals tl1−xin1−xgexse2 (x=0.1, 0.2) |
publisher |
Polish Academy of Sciences |
series |
Archives of Metallurgy and Materials |
issn |
2300-1909 |
publishDate |
2015-09-01 |
description |
Temperature dependences of electroconductivity for single crystals Tl1−xIn1−xGexSe2 were analyzed. It was established an occurrence of thermoactivated states within the temperature range 100-300 K. The conductivity is formed by delocalized carriers within the conductivity band and the jumping conductivity over the localized states which are situated in the narrow localized states near the Fermi level. Following the performed data the activation energy was evaluated with accuracy up to 0.02 eV. The density of the localized states as well as the distribution of the energy over the mentioned states was evaluated. Additionally the average distance between the localized states is evaluated at different temperatures. |
topic |
Tl1−xIn1−xGexSe2 single crystal chalcogenide crystals transport features photoinduced birefringence electroconductivity mechanisms Urbach rule |
url |
http://www.degruyter.com/view/j/amm.2015.60.issue-3/amm-2015-0343/amm-2015-0343.xml?format=INT |
work_keys_str_mv |
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