Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

Abstract In this work, we report the successful growth of high-quality SiO2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO2 films were grown at 90 °C using CO2 and Bis(tertiary-butylamino)silane...

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Bibliographic Details
Main Authors: Zhen Zhu, Perttu Sippola, Oili M. E. Ylivaara, Chiara Modanese, Marisa Di Sabatino, Kenichiro Mizohata, Saoussen Merdes, Harri Lipsanen, Hele Savin
Format: Article
Language:English
Published: SpringerOpen 2019-02-01
Series:Nanoscale Research Letters
Subjects:
Carbon dioxide
Silicon dioxide
ALD
Plasma
Radicals
Oxidation
Online Access:http://link.springer.com/article/10.1186/s11671-019-2889-y

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