Dielectric properties of amorphous Zr–Al–O and Zr-Si-O thin films
We have systematically studied the composition dependence of the dielectric properties of Zr1-xAlxO2-x/2 and Zr1-xSixO2. An essentially linear variation of the static dielectric constant, εs, was observed as a function of composition, x, for compositions rich in the p-block element, i.e., x > 0.4...
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World Scientific Publishing
2015-03-01
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| Series: | Journal of Advanced Dielectrics |
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| Online Access: | http://www.worldscientific.com/doi/pdf/10.1142/S2010135X15500101 |
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doaj-4b8117c60a4f4ebf866ec534e3404b0f2020-11-24T22:09:24ZengWorld Scientific PublishingJournal of Advanced Dielectrics2010-135X2010-13682015-03-01511550010-11550010-810.1142/S2010135X1550010110.1142/S2010135X15500101Dielectric properties of amorphous Zr–Al–O and Zr-Si-O thin filmsT. A. Naoi0Hanjong Paik1M. L. Green2R. B. van Dover3Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USADepartment of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USANational Institute of Standards and Technology, Gaithersburg, Maryland 20899, USADepartment of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USAWe have systematically studied the composition dependence of the dielectric properties of Zr1-xAlxO2-x/2 and Zr1-xSixO2. An essentially linear variation of the static dielectric constant, εs, was observed as a function of composition, x, for compositions rich in the p-block element, i.e., x > 0.4, for both chemical systems. However an abrupt change in εs is found near x ≈ 0.35, associated with the onset of crystallinity in as-deposited films. Breakdown fields do not show a comparable composition dependence. Measurements of the index of refraction at optical frequencies, combined with a simple Clausius–Mossotti interpretation, indicates that low-frequency (ionic) contributions to the polarizability exhibit systematic deviation with respect to values linearly interpolated from the endmembers. These trends are not consistently affected by the presence of crystalline order, but are related to changes associated with heterogeneous local oxygen coordination and bonding.http://www.worldscientific.com/doi/pdf/10.1142/S2010135X15500101Permitivittyamorphouszirconia |
| collection |
DOAJ |
| language |
English |
| format |
Article |
| sources |
DOAJ |
| author |
T. A. Naoi Hanjong Paik M. L. Green R. B. van Dover |
| spellingShingle |
T. A. Naoi Hanjong Paik M. L. Green R. B. van Dover Dielectric properties of amorphous Zr–Al–O and Zr-Si-O thin films Journal of Advanced Dielectrics Permitivitty amorphous zirconia |
| author_facet |
T. A. Naoi Hanjong Paik M. L. Green R. B. van Dover |
| author_sort |
T. A. Naoi |
| title |
Dielectric properties of amorphous Zr–Al–O and Zr-Si-O thin films |
| title_short |
Dielectric properties of amorphous Zr–Al–O and Zr-Si-O thin films |
| title_full |
Dielectric properties of amorphous Zr–Al–O and Zr-Si-O thin films |
| title_fullStr |
Dielectric properties of amorphous Zr–Al–O and Zr-Si-O thin films |
| title_full_unstemmed |
Dielectric properties of amorphous Zr–Al–O and Zr-Si-O thin films |
| title_sort |
dielectric properties of amorphous zr–al–o and zr-si-o thin films |
| publisher |
World Scientific Publishing |
| series |
Journal of Advanced Dielectrics |
| issn |
2010-135X 2010-1368 |
| publishDate |
2015-03-01 |
| description |
We have systematically studied the composition dependence of the dielectric properties of Zr1-xAlxO2-x/2 and Zr1-xSixO2. An essentially linear variation of the static dielectric constant, εs, was observed as a function of composition, x, for compositions rich in the p-block element, i.e., x > 0.4, for both chemical systems. However an abrupt change in εs is found near x ≈ 0.35, associated with the onset of crystallinity in as-deposited films. Breakdown fields do not show a comparable composition dependence. Measurements of the index of refraction at optical frequencies, combined with a simple Clausius–Mossotti interpretation, indicates that low-frequency (ionic) contributions to the polarizability exhibit systematic deviation with respect to values linearly interpolated from the endmembers. These trends are not consistently affected by the presence of crystalline order, but are related to changes associated with heterogeneous local oxygen coordination and bonding. |
| topic |
Permitivitty amorphous zirconia |
| url |
http://www.worldscientific.com/doi/pdf/10.1142/S2010135X15500101 |
| work_keys_str_mv |
AT tanaoi dielectricpropertiesofamorphouszraloandzrsiothinfilms AT hanjongpaik dielectricpropertiesofamorphouszraloandzrsiothinfilms AT mlgreen dielectricpropertiesofamorphouszraloandzrsiothinfilms AT rbvandover dielectricpropertiesofamorphouszraloandzrsiothinfilms |
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1725812111517417472 |