Application of tight-binding method to calculate the band structure and the effect of pressure in crystal ZnSe
Abstract<br /> In this research tight-binding method has been applied to calculate the band structure in ZnSe crystal, the matrix elements of have been calculated using the method used by Vogl and Cohen. A computer program has been designed in MATLAB language to calculate the band structure in...
Main Authors: | Hussein Sultan, Mumtaz Hussien |
---|---|
Format: | Article |
Language: | Arabic |
Published: |
College of Education for Pure Sciences
2021-06-01
|
Series: | مجلة التربية والعلم |
Subjects: | |
Online Access: | https://edusj.mosuljournals.com/article_167847_c6c0287275b46253ba872db73c3f1723.pdf |
Similar Items
-
Calculation of The Electronic Energy Band Structure of GaAs Crystal Using The Semiempirical Tight Binding Method
by: Ismail Yahya, et al.
Published: (2021-09-01) -
ODMR studies of recombination emission bands in ZnSe and ZnS
by: Poolton, N.
Published: (1987) -
Enhancement of electrical performance of ZnSe thin films via Au nanosandwiching
by: Qasrawi A.F., et al.
Published: (2020-03-01) -
ZnSe/ZnSeTe Superlattice Nanotips
by: Young SJ, et al.
Published: (2010-01-01) -
ZnSe/Si HETEROEKLEM YAPININ FOTOELEKTRİK ÖZELLİKLERİNİN İNCELENMESİ
by: Sertan Kemal Akay, et al.
Published: (2019-04-01)