SnS thin films prepared by H2S-free process and its p-type thin film transistor
Polycrystalline SnS thin films were fabricated by a H2S-free process combing pulsed laser deposition at room temperature and post-deposition thermal annealing in Ar. Thermal annealing improved the crystalline quality of the SnS films and the best films were obtained by 400 °C annealing. The obtained...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4940931 |
| Summary: | Polycrystalline SnS thin films were fabricated by a H2S-free process combing pulsed laser deposition at room temperature and post-deposition thermal annealing in Ar. Thermal annealing improved the crystalline quality of the SnS films and the best films were obtained by 400 °C annealing. The obtained SnS films exhibited p-type conduction with the highest Hall mobility of 28 cm2/(V ⋅ s) and the carrier densities of 1.5 × 1015 – 1.8 × 1016 cm−3. The SnS TFT exhibited p-type operation with a field effect mobility and an on-off drain current ratio of 0.4 cm2/(V ⋅ s) and 20, respectively. |
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| ISSN: | 2158-3226 |