Estimation of diffusion behaviour of metals used for the creation of multilayered contacts to heterostructures based on GaAs

The formation of the microstructure of metallization layers was investigated, and the calculations of the size of diffusion areas on the interphase boundaries in systems metal (Au, Ti, Pt)/GaAs and metal / metal was executed. The formation of the microstructure is accompanied by development in layer...

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Main Authors:	V. V. Arbenina, A. S. Kashuba, E. V. Permikina
Format:	Article
Language:	Russian
Published:	MIREA - Russian Technological University 2014-10-01
Series:	Тонкие химические технологии
Subjects:	metallization, interphase boundaries, microstructure, polycrystalline layers, diffusion.
Online Access:	https://www.finechem-mirea.ru/jour/article/view/438

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spelling	doaj-4e79ad2bd1ed440b9e8e076b2cbca9fe2021-07-28T13:23:58ZrusMIREA - Russian Technological UniversityТонкие химические технологии2410-65932686-75752014-10-01954448432Estimation of diffusion behaviour of metals used for the creation of multilayered contacts to heterostructures based on GaAsV. V. Arbenina0A. S. Kashuba1E. V. Permikina2M.V. Lomonosov Moscow State University of Fine Chemical Technologies, 86, Vernadskogo pr., Moscow 119571«RD&PCenter «Orion», Moscow, 111123«RD&PCenter «Orion», Moscow, 111123The formation of the microstructure of metallization layers was investigated, and the calculations of the size of diffusion areas on the interphase boundaries in systems metal (Au, Ti, Pt)/GaAs and metal / metal was executed. The formation of the microstructure is accompanied by development in layers of internal stress. Internal stress in many respects determines the electrical and mechanical characteristics of the metallization layers and the influence of diffusion processes on the rate. Using the obtained results it is possible to choose purposefully the modes of drawing of metal layers and annealing structures in order to obtain systems of metallization with small internal stress and high level conductivity.https://www.finechem-mirea.ru/jour/article/view/438metallization, interphase boundaries, microstructure, polycrystalline layers, diffusion.
collection	DOAJ
language	Russian
format	Article
sources	DOAJ
author	V. V. Arbenina A. S. Kashuba E. V. Permikina
spellingShingle	V. V. Arbenina A. S. Kashuba E. V. Permikina Estimation of diffusion behaviour of metals used for the creation of multilayered contacts to heterostructures based on GaAs Тонкие химические технологии metallization, interphase boundaries, microstructure, polycrystalline layers, diffusion.
author_facet	V. V. Arbenina A. S. Kashuba E. V. Permikina
author_sort	V. V. Arbenina
title	Estimation of diffusion behaviour of metals used for the creation of multilayered contacts to heterostructures based on GaAs
title_short	Estimation of diffusion behaviour of metals used for the creation of multilayered contacts to heterostructures based on GaAs
title_full	Estimation of diffusion behaviour of metals used for the creation of multilayered contacts to heterostructures based on GaAs
title_fullStr	Estimation of diffusion behaviour of metals used for the creation of multilayered contacts to heterostructures based on GaAs
title_full_unstemmed	Estimation of diffusion behaviour of metals used for the creation of multilayered contacts to heterostructures based on GaAs
title_sort	estimation of diffusion behaviour of metals used for the creation of multilayered contacts to heterostructures based on gaas
publisher	MIREA - Russian Technological University
series	Тонкие химические технологии
issn	2410-6593 2686-7575
publishDate	2014-10-01
description	The formation of the microstructure of metallization layers was investigated, and the calculations of the size of diffusion areas on the interphase boundaries in systems metal (Au, Ti, Pt)/GaAs and metal / metal was executed. The formation of the microstructure is accompanied by development in layers of internal stress. Internal stress in many respects determines the electrical and mechanical characteristics of the metallization layers and the influence of diffusion processes on the rate. Using the obtained results it is possible to choose purposefully the modes of drawing of metal layers and annealing structures in order to obtain systems of metallization with small internal stress and high level conductivity.
topic	metallization, interphase boundaries, microstructure, polycrystalline layers, diffusion.
url	https://www.finechem-mirea.ru/jour/article/view/438
work_keys_str_mv	AT vvarbenina estimationofdiffusionbehaviourofmetalsusedforthecreationofmultilayeredcontactstoheterostructuresbasedongaas AT askashuba estimationofdiffusionbehaviourofmetalsusedforthecreationofmultilayeredcontactstoheterostructuresbasedongaas AT evpermikina estimationofdiffusionbehaviourofmetalsusedforthecreationofmultilayeredcontactstoheterostructuresbasedongaas
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Estimation of diffusion behaviour of metals used for the creation of multilayered contacts to heterostructures based on GaAs

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