Investigation of Crystal and Electronic Structures Features of Hf1-xTmxNiSn Semiconductor Solid Solution
<p><span>The features of structural, energy state and electrokinetic characteristics were investigated for Hf1 xTmxNiSn solid solution in the range: T = 80 - 400 K, x = 0 - 0.40. It was confirmed partly disorder crystal structure of HfNiSn compound as a result of occupation in the 4a cry...
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Vasyl Stefanyk Precarpathian National University
2017-09-01
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doaj-4fd140b84ae24bedbc6c26000963881a2020-11-24T22:08:52ZengVasyl Stefanyk Precarpathian National UniversityФізика і хімія твердого тіла1729-44282309-85892017-09-0117221222110.15330/pcss.17.2.212-2211821Investigation of Crystal and Electronic Structures Features of Hf1-xTmxNiSn Semiconductor Solid SolutionL. P. Romaka0V. V. Romaka1V. Ya. Krayovskyy2Yu. V. Stadnyk3P. -F. Rogl4A. M. Нoryn5Львівський національний університет ім. І.Франка.Національний університет “Львівська політехніка”.Національний університет “Львівська політехніка”.Львівський національний університет ім. І.Франка.Віденський університет.Львівський національний університет ім. І.Франка.<p><span>The features of structural, energy state and electrokinetic characteristics were investigated for Hf1 xTmxNiSn solid solution in the range: T = 80 - 400 K, x = 0 - 0.40. It was confirmed partly disorder crystal structure of HfNiSn compound as a result of occupation in the 4a crystallographic site of Hf (5d</span><sup>2</sup><span>6s</span><sup>2</sup><span>) atoms by Ni (3d</span><sup>8</sup><span>4s</span><sup>2</sup><span>) ones up to ~ 1 % that generates in the crystal structural defects of donor nature. It was shown that introduction of Tm atoms ordered crystal structure (“healing” of structural defects). It was established mechanisms of simultaneous generation of structural defects as acceptors by substitution of Hf (5d</span><sup>2</sup><span>6s</span><sup>2</sup><span>) by Tm (4f</span><sup>13</sup><span>5d</span><sup>0</sup><span>6s</span><sup>2</sup><span>) atoms, and the donor nature defects as a result of the appearance of vacancies in the Sn (4b) atoms sites, which determines the mechanisms of conductivity for Hf</span><sub>1-x</sub><span>Tm</span><sub>x</sub><span>NiSn. </span></p><p>Keywords: crystal and electronic structures, conductivity, thermopower coefficient.</p>http://journals.pu.if.ua/index.php/pcss/article/view/1322 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
L. P. Romaka V. V. Romaka V. Ya. Krayovskyy Yu. V. Stadnyk P. -F. Rogl A. M. Нoryn |
spellingShingle |
L. P. Romaka V. V. Romaka V. Ya. Krayovskyy Yu. V. Stadnyk P. -F. Rogl A. M. Нoryn Investigation of Crystal and Electronic Structures Features of Hf1-xTmxNiSn Semiconductor Solid Solution Фізика і хімія твердого тіла |
author_facet |
L. P. Romaka V. V. Romaka V. Ya. Krayovskyy Yu. V. Stadnyk P. -F. Rogl A. M. Нoryn |
author_sort |
L. P. Romaka |
title |
Investigation of Crystal and Electronic Structures Features of Hf1-xTmxNiSn Semiconductor Solid Solution |
title_short |
Investigation of Crystal and Electronic Structures Features of Hf1-xTmxNiSn Semiconductor Solid Solution |
title_full |
Investigation of Crystal and Electronic Structures Features of Hf1-xTmxNiSn Semiconductor Solid Solution |
title_fullStr |
Investigation of Crystal and Electronic Structures Features of Hf1-xTmxNiSn Semiconductor Solid Solution |
title_full_unstemmed |
Investigation of Crystal and Electronic Structures Features of Hf1-xTmxNiSn Semiconductor Solid Solution |
title_sort |
investigation of crystal and electronic structures features of hf1-xtmxnisn semiconductor solid solution |
publisher |
Vasyl Stefanyk Precarpathian National University |
series |
Фізика і хімія твердого тіла |
issn |
1729-4428 2309-8589 |
publishDate |
2017-09-01 |
description |
<p><span>The features of structural, energy state and electrokinetic characteristics were investigated for Hf1 xTmxNiSn solid solution in the range: T = 80 - 400 K, x = 0 - 0.40. It was confirmed partly disorder crystal structure of HfNiSn compound as a result of occupation in the 4a crystallographic site of Hf (5d</span><sup>2</sup><span>6s</span><sup>2</sup><span>) atoms by Ni (3d</span><sup>8</sup><span>4s</span><sup>2</sup><span>) ones up to ~ 1 % that generates in the crystal structural defects of donor nature. It was shown that introduction of Tm atoms ordered crystal structure (“healing” of structural defects). It was established mechanisms of simultaneous generation of structural defects as acceptors by substitution of Hf (5d</span><sup>2</sup><span>6s</span><sup>2</sup><span>) by Tm (4f</span><sup>13</sup><span>5d</span><sup>0</sup><span>6s</span><sup>2</sup><span>) atoms, and the donor nature defects as a result of the appearance of vacancies in the Sn (4b) atoms sites, which determines the mechanisms of conductivity for Hf</span><sub>1-x</sub><span>Tm</span><sub>x</sub><span>NiSn. </span></p><p>Keywords: crystal and electronic structures, conductivity, thermopower coefficient.</p> |
url |
http://journals.pu.if.ua/index.php/pcss/article/view/1322 |
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