Disorder induced transition of electrical properties of graphene by thermal annealing

We report the transport behavior of bilayer graphene grown by thermal chemical vapor deposition. The bilayer graphene films annealed at 700 °C in a furnace under Ar atmosphere exhibited transitions from a metal to a semiconductor or insulator, with temperature-dependent resistances. This modulation...

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Bibliographic Details
Main Author: Chang-Soo Park
Format: Article
Language:English
Published: Elsevier 2018-06-01
Series:Results in Physics
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379718309136