Disorder induced transition of electrical properties of graphene by thermal annealing
We report the transport behavior of bilayer graphene grown by thermal chemical vapor deposition. The bilayer graphene films annealed at 700 °C in a furnace under Ar atmosphere exhibited transitions from a metal to a semiconductor or insulator, with temperature-dependent resistances. This modulation...
| Main Author: | |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2018-06-01
|
| Series: | Results in Physics |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2211379718309136 |