Design of a bandgap reference with low temperature drift and high power supply rejection ratio
Based on bandgap voltage reference structure in the traditional current mode and the first-order compensation of the voltage reference output characteristics, introducing a subsection compensation circuit,which significantly improve the accuracy of voltage reference in a wide temperature range(-50~1...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | zho |
| Published: |
National Computer System Engineering Research Institute of China
2018-01-01
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| Series: | Dianzi Jishu Yingyong |
| Subjects: | |
| Online Access: | http://www.chinaaet.com/article/3000075819 |
| Summary: | Based on bandgap voltage reference structure in the traditional current mode and the first-order compensation of the voltage reference output characteristics, introducing a subsection compensation circuit,which significantly improve the accuracy of voltage reference in a wide temperature range(-50~150 ℃). At the same time, the circuit is simply improved, the output voltage to obtain a high power supply rejection ratio .Using TSMC 65 nm CMOS process simulation model, in the power supply voltage of 1.5 V, power supply rejection ratio is -83.6 dB, temperature coefficient is 2.27 ppm/℃. |
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| ISSN: | 0258-7998 |