Design of a bandgap reference with low temperature drift and high power supply rejection ratio

Design of a bandgap reference with low temperature drift and high power supply rejection ratio

Based on bandgap voltage reference structure in the traditional current mode and the first-order compensation of the voltage reference output characteristics, introducing a subsection compensation circuit,which significantly improve the accuracy of voltage reference in a wide temperature range(-50~1...

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Bibliographic Details
Main Authors: Qing Xudong, Zhong Li, Wang Yonglu, Qin Shaohong, Chen Zhenzhong
Format: Article
Language:zho
Published: National Computer System Engineering Research Institute of China 2018-01-01
Series:Dianzi Jishu Yingyong
Subjects:
bandgap voltage reference
low temperature drift
high power supply rejection ratio
Online Access:http://www.chinaaet.com/article/3000075819
id doaj-506ad2788ba2446c89f9a70a69d109ae
record_format Article
spelling doaj-506ad2788ba2446c89f9a70a69d109ae2020-11-24T20:43:52ZzhoNational Computer System Engineering Research Institute of ChinaDianzi Jishu Yingyong0258-79982018-01-01441171910.16157/j.issn.0258-7998.1719923000075819Design of a bandgap reference with low temperature drift and high power supply rejection ratioQing Xudong0Zhong Li1Wang Yonglu2Qin Shaohong3Chen Zhenzhong4College of Optoelectronic Engineering，Chongqing University of Posts and Telecommunications，Chongqing 400060，ChinaCollege of Optoelectronic Engineering，Chongqing University of Posts and Telecommunications，Chongqing 400060，ChinaScience and Technology on Analog Integrated Circuit Laboratory，Chongqing 400060，ChinaCollege of Optoelectronic Engineering，Chongqing University of Posts and Telecommunications，Chongqing 400060，ChinaCollege of Optoelectronic Engineering，Chongqing University of Posts and Telecommunications，Chongqing 400060，ChinaBased on bandgap voltage reference structure in the traditional current mode and the first-order compensation of the voltage reference output characteristics, introducing a subsection compensation circuit,which significantly improve the accuracy of voltage reference in a wide temperature range(-50~150 ℃). At the same time, the circuit is simply improved, the output voltage to obtain a high power supply rejection ratio .Using TSMC 65 nm CMOS process simulation model, in the power supply voltage of 1.5 V, power supply rejection ratio is -83.6 dB, temperature coefficient is 2.27 ppm/℃.http://www.chinaaet.com/article/3000075819bandgap voltage referencelow temperature drifthigh power supply rejection ratio
collection DOAJ
language zho
format Article
sources DOAJ
author Qing Xudong
Zhong Li
Wang Yonglu
Qin Shaohong
Chen Zhenzhong
spellingShingle Qing Xudong
Zhong Li
Wang Yonglu
Qin Shaohong
Chen Zhenzhong
Design of a bandgap reference with low temperature drift and high power supply rejection ratio
Dianzi Jishu Yingyong
bandgap voltage reference
low temperature drift
high power supply rejection ratio
author_facet Qing Xudong
Zhong Li
Wang Yonglu
Qin Shaohong
Chen Zhenzhong
author_sort Qing Xudong
title Design of a bandgap reference with low temperature drift and high power supply rejection ratio
title_short Design of a bandgap reference with low temperature drift and high power supply rejection ratio
title_full Design of a bandgap reference with low temperature drift and high power supply rejection ratio
title_fullStr Design of a bandgap reference with low temperature drift and high power supply rejection ratio
title_full_unstemmed Design of a bandgap reference with low temperature drift and high power supply rejection ratio
title_sort design of a bandgap reference with low temperature drift and high power supply rejection ratio
publisher National Computer System Engineering Research Institute of China
series Dianzi Jishu Yingyong
issn 0258-7998
publishDate 2018-01-01
description Based on bandgap voltage reference structure in the traditional current mode and the first-order compensation of the voltage reference output characteristics, introducing a subsection compensation circuit,which significantly improve the accuracy of voltage reference in a wide temperature range(-50~150 ℃). At the same time, the circuit is simply improved, the output voltage to obtain a high power supply rejection ratio .Using TSMC 65 nm CMOS process simulation model, in the power supply voltage of 1.5 V, power supply rejection ratio is -83.6 dB, temperature coefficient is 2.27 ppm/℃.
topic bandgap voltage reference
low temperature drift
high power supply rejection ratio
url http://www.chinaaet.com/article/3000075819
work_keys_str_mv AT qingxudong designofabandgapreferencewithlowtemperaturedriftandhighpowersupplyrejectionratio
AT zhongli designofabandgapreferencewithlowtemperaturedriftandhighpowersupplyrejectionratio
AT wangyonglu designofabandgapreferencewithlowtemperaturedriftandhighpowersupplyrejectionratio
AT qinshaohong designofabandgapreferencewithlowtemperaturedriftandhighpowersupplyrejectionratio
AT chenzhenzhong designofabandgapreferencewithlowtemperaturedriftandhighpowersupplyrejectionratio
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