Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layers
Alkali-fluoride post-deposition treatments (PDTs) of Cu(In,Ga)Se2 (CIGS) absorbers have repeatedly resulted in device efficiency improvements, observed mainly due to an open-circuit voltage (Voc) enhancement. Replacement of the CdS buffer layer with a higher band gap alternative can increase the sho...
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doaj-510e38266767484cb7f047410a7171222021-04-02T20:26:10ZengEDP SciencesEPJ Photovoltaics2105-07162020-01-0111810.1051/epjpv/2020005pv200011Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layersKanevce AnaPaetel StefanHariskos DimitriosMagorian Friedlmeier TheresaAlkali-fluoride post-deposition treatments (PDTs) of Cu(In,Ga)Se2 (CIGS) absorbers have repeatedly resulted in device efficiency improvements, observed mainly due to an open-circuit voltage (Voc) enhancement. Replacement of the CdS buffer layer with a higher band gap alternative can increase the short-circuit current density (Jsc) and also eliminate the use of Cd. In many alternative-buffer attempts, however, the Jsc gain was accompanied by a Voc loss, resulting in some degree of performance loss. In order to better understand the impact of RbF-PDT, we analyze a combination of experimental devices produced in the same in-line CIGS run with and without RbF-PDT in combination with chemical-bath-deposited CdS and Zn(O,S) buffers. Low-temperature current–voltage curves indicate a difference in Rb impact on the CIGS/CdS and CIGS/Zn(O,S) p-n junctions. For example, the diode-current barrier which creates a rollover often observed in RbF-treated CIGS/CdS current–voltage curves is significantly reduced for the CIGS/Zn(O,S) junction. Although the RbF-PDT had a positive impact on both junction partner combinations, the CIGS/Zn(O,S) devices' Voc and fill factor (FF) benefited stronger from the RbF treatment. As a result, in our samples, the Jsc and FF gain balanced the Voc loss, thus reducing the efficiency difference between cells with CdS and Zn(O,S) buffers.https://www.epj-pv.org/articles/epjpv/full_html/2020/01/pv200011/pv200011.htmlcigs solar cellsrbf-pdtzn(o,s)characterization |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Kanevce Ana Paetel Stefan Hariskos Dimitrios Magorian Friedlmeier Theresa |
spellingShingle |
Kanevce Ana Paetel Stefan Hariskos Dimitrios Magorian Friedlmeier Theresa Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layers EPJ Photovoltaics cigs solar cells rbf-pdt zn(o,s) characterization |
author_facet |
Kanevce Ana Paetel Stefan Hariskos Dimitrios Magorian Friedlmeier Theresa |
author_sort |
Kanevce Ana |
title |
Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layers |
title_short |
Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layers |
title_full |
Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layers |
title_fullStr |
Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layers |
title_full_unstemmed |
Impact of RbF-PDT on Cu(In,Ga)Se2 solar cells with CdS and Zn(O,S) buffer layers |
title_sort |
impact of rbf-pdt on cu(in,ga)se2 solar cells with cds and zn(o,s) buffer layers |
publisher |
EDP Sciences |
series |
EPJ Photovoltaics |
issn |
2105-0716 |
publishDate |
2020-01-01 |
description |
Alkali-fluoride post-deposition treatments (PDTs) of Cu(In,Ga)Se2 (CIGS) absorbers have repeatedly resulted in device efficiency improvements, observed mainly due to an open-circuit voltage (Voc) enhancement. Replacement of the CdS buffer layer with a higher band gap alternative can increase the short-circuit current density (Jsc) and also eliminate the use of Cd. In many alternative-buffer attempts, however, the Jsc gain was accompanied by a Voc loss, resulting in some degree of performance loss. In order to better understand the impact of RbF-PDT, we analyze a combination of experimental devices produced in the same in-line CIGS run with and without RbF-PDT in combination with chemical-bath-deposited CdS and Zn(O,S) buffers. Low-temperature current–voltage curves indicate a difference in Rb impact on the CIGS/CdS and CIGS/Zn(O,S) p-n junctions. For example, the diode-current barrier which creates a rollover often observed in RbF-treated CIGS/CdS current–voltage curves is significantly reduced for the CIGS/Zn(O,S) junction. Although the RbF-PDT had a positive impact on both junction partner combinations, the CIGS/Zn(O,S) devices' Voc and fill factor (FF) benefited stronger from the RbF treatment. As a result, in our samples, the Jsc and FF gain balanced the Voc loss, thus reducing the efficiency difference between cells with CdS and Zn(O,S) buffers. |
topic |
cigs solar cells rbf-pdt zn(o,s) characterization |
url |
https://www.epj-pv.org/articles/epjpv/full_html/2020/01/pv200011/pv200011.html |
work_keys_str_mv |
AT kanevceana impactofrbfpdtoncuingase2solarcellswithcdsandznosbufferlayers AT paetelstefan impactofrbfpdtoncuingase2solarcellswithcdsandznosbufferlayers AT hariskosdimitrios impactofrbfpdtoncuingase2solarcellswithcdsandznosbufferlayers AT magorianfriedlmeiertheresa impactofrbfpdtoncuingase2solarcellswithcdsandznosbufferlayers |
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