Photovoltaic Behavior of V<sub>2</sub>O<sub>5</sub>/4H-SiC Schottky Diodes for Cryogenic Applications

Photovoltaic Behavior of V<sub>2</sub>O<sub>5</sub>/4H-SiC Schottky Diodes for Cryogenic Applications

The photovoltaic behavior of (divanadioum pentoxide)/(4H polytype silicon carbide) Schottky diodes under ultraviolet illumination and down to 28K is investigated. In addition to their high stability, by using the thermionic model the analysis allows to confirm the predictability of performances at c...

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Bibliographic Details
Main Authors: Luigi Di Benedetto, Giovanni Landi, Gian Domenico Licciardo, Heinz-Christoph Neitzert, Salvatore Bellone
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
4H&#x2212;SiC device
Photodiodes
Photovoltaic effects
Schottky diodes
Silicon compound
Online Access:https://ieeexplore.ieee.org/document/7140730/
Description
Summary:The photovoltaic behavior of (divanadioum pentoxide)/(4H polytype silicon carbide) Schottky diodes under ultraviolet illumination and down to 28K is investigated. In addition to their high stability, by using the thermionic model the analysis allows to confirm the predictability of performances at cryogenic temperatures, such as the high light/dark current ratio and the dependence of the photocurrent and open circuit voltage on material parameters. Because of the low-annealing temperature, this structure is shown to be a good candidate for solar-blind photodetectors in the UV spectral range of spatial and terrestrial cryogenic applications.
ISSN:2168-6734

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