Photovoltaic Behavior of V<sub>2</sub>O<sub>5</sub>/4H-SiC Schottky Diodes for Cryogenic Applications

Photovoltaic Behavior of V<sub>2</sub>O<sub>5</sub>/4H-SiC Schottky Diodes for Cryogenic Applications

The photovoltaic behavior of (divanadioum pentoxide)/(4H polytype silicon carbide) Schottky diodes under ultraviolet illumination and down to 28K is investigated. In addition to their high stability, by using the thermionic model the analysis allows to confirm the predictability of performances at c...

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Main Authors: Luigi Di Benedetto, Giovanni Landi, Gian Domenico Licciardo, Heinz-Christoph Neitzert, Salvatore Bellone
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
4H&#x2212;SiC device
Photodiodes
Photovoltaic effects
Schottky diodes
Silicon compound
Online Access:https://ieeexplore.ieee.org/document/7140730/
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spelling doaj-51d67040fce74744a4c3327fa7888bc72021-03-29T18:43:27ZengIEEEIEEE Journal of the Electron Devices Society2168-67342015-01-013541842210.1109/JEDS.2015.24510977140730Photovoltaic Behavior of V<sub>2</sub>O<sub>5</sub>/4H-SiC Schottky Diodes for Cryogenic ApplicationsLuigi Di Benedetto0https://orcid.org/0000-0001-5588-0621Giovanni Landi1Gian Domenico Licciardo2Heinz-Christoph Neitzert3Salvatore Bellone4Department of Industrial Engineering, University of Salerno, Fisciano, ItalyDepartment of Industrial Engineering, University of Salerno, Fisciano, ItalyDepartment of Industrial Engineering, University of Salerno, Fisciano, ItalyDepartment of Industrial Engineering, University of Salerno, Fisciano, ItalyDepartment of Industrial Engineering, University of Salerno, Fisciano, ItalyThe photovoltaic behavior of (divanadioum pentoxide)/(4H polytype silicon carbide) Schottky diodes under ultraviolet illumination and down to 28K is investigated. In addition to their high stability, by using the thermionic model the analysis allows to confirm the predictability of performances at cryogenic temperatures, such as the high light/dark current ratio and the dependence of the photocurrent and open circuit voltage on material parameters. Because of the low-annealing temperature, this structure is shown to be a good candidate for solar-blind photodetectors in the UV spectral range of spatial and terrestrial cryogenic applications.https://ieeexplore.ieee.org/document/7140730/4H&#x2212;SiC devicePhotodiodesPhotovoltaic effectsSchottky diodesSilicon compound
collection DOAJ
language English
format Article
sources DOAJ
author Luigi Di Benedetto
Giovanni Landi
Gian Domenico Licciardo
Heinz-Christoph Neitzert
Salvatore Bellone
spellingShingle Luigi Di Benedetto
Giovanni Landi
Gian Domenico Licciardo
Heinz-Christoph Neitzert
Salvatore Bellone
Photovoltaic Behavior of V<sub>2</sub>O<sub>5</sub>/4H-SiC Schottky Diodes for Cryogenic Applications
IEEE Journal of the Electron Devices Society
4H&#x2212;SiC device
Photodiodes
Photovoltaic effects
Schottky diodes
Silicon compound
author_facet Luigi Di Benedetto
Giovanni Landi
Gian Domenico Licciardo
Heinz-Christoph Neitzert
Salvatore Bellone
author_sort Luigi Di Benedetto
title Photovoltaic Behavior of V<sub>2</sub>O<sub>5</sub>/4H-SiC Schottky Diodes for Cryogenic Applications
title_short Photovoltaic Behavior of V<sub>2</sub>O<sub>5</sub>/4H-SiC Schottky Diodes for Cryogenic Applications
title_full Photovoltaic Behavior of V<sub>2</sub>O<sub>5</sub>/4H-SiC Schottky Diodes for Cryogenic Applications
title_fullStr Photovoltaic Behavior of V<sub>2</sub>O<sub>5</sub>/4H-SiC Schottky Diodes for Cryogenic Applications
title_full_unstemmed Photovoltaic Behavior of V<sub>2</sub>O<sub>5</sub>/4H-SiC Schottky Diodes for Cryogenic Applications
title_sort photovoltaic behavior of v<sub>2</sub>o<sub>5</sub>/4h-sic schottky diodes for cryogenic applications
publisher IEEE
series IEEE Journal of the Electron Devices Society
issn 2168-6734
publishDate 2015-01-01
description The photovoltaic behavior of (divanadioum pentoxide)/(4H polytype silicon carbide) Schottky diodes under ultraviolet illumination and down to 28K is investigated. In addition to their high stability, by using the thermionic model the analysis allows to confirm the predictability of performances at cryogenic temperatures, such as the high light/dark current ratio and the dependence of the photocurrent and open circuit voltage on material parameters. Because of the low-annealing temperature, this structure is shown to be a good candidate for solar-blind photodetectors in the UV spectral range of spatial and terrestrial cryogenic applications.
topic 4H&#x2212;SiC device
Photodiodes
Photovoltaic effects
Schottky diodes
Silicon compound
url https://ieeexplore.ieee.org/document/7140730/
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AT giandomenicolicciardo photovoltaicbehaviorofvsub2subosub5sub4hsicschottkydiodesforcryogenicapplications
AT heinzchristophneitzert photovoltaicbehaviorofvsub2subosub5sub4hsicschottkydiodesforcryogenicapplications
AT salvatorebellone photovoltaicbehaviorofvsub2subosub5sub4hsicschottkydiodesforcryogenicapplications
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