Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si<sub>1−x</sub>Ge<sub>x</sub> Thin-Film Transistors
We investigated the characteristics of excimer laser-annealed polycrystalline silicon−germanium (poly-Si<sub>1−x</sub>Ge<sub>x</sub>) thin film and thin-film transistor (TFT). The Ge concentration was increased from 0% to 12.3% using a SiH<sub>4</...
Main Authors: | , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2019-05-01
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Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/12/11/1739 |