Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si<sub>1−x</sub>Ge<sub>x</sub> Thin-Film Transistors

Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si<sub>1−x</sub>Ge<sub>x</sub> Thin-Film Transistors

We investigated the characteristics of excimer laser-annealed polycrystalline silicon−germanium (poly-Si<sub>1−x</sub>Ge<sub>x</sub>) thin film and thin-film transistor (TFT). The Ge concentration was increased from 0% to 12.3% using a SiH<sub>4</...

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Bibliographic Details
Main Authors:	Kyungsoo Jang, Youngkuk Kim, Joonghyun Park, Junsin Yi
Format:	Article
Language:	English
Published:	MDPI AG 2019-05-01
Series:	Materials
Subjects:	poly-Si<sub>1−x</sub>Ge<sub>x</sub> excimer laser annealing thin-film transistor density of states
Online Access:	https://www.mdpi.com/1996-1944/12/11/1739

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