Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal−insulator−semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton irradiation. TDDB characteristics of norma...

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Main Authors:	Dongmin Keum, Hyungtak Kim
Format:	Article
Language:	English
Published:	MDPI AG 2019-10-01
Series:	Micromachines
Subjects:	algan/gan proton irradiation time-dependent dielectric breakdown (tddb) reliability normally off
Online Access:	https://www.mdpi.com/2072-666X/10/11/723

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record_format	Article
spelling	doaj-537a632ce48c489d8a7cf289dcfed4812020-11-24T21:24:07ZengMDPI AGMicromachines2072-666X2019-10-01101172310.3390/mi10110723mi10110723Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect TransistorsDongmin Keum0Hyungtak Kim1School of Electronic and Electrical Engineering, Hongik University, Seoul 04066, KoreaSchool of Electronic and Electrical Engineering, Hongik University, Seoul 04066, KoreaIn this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal−insulator−semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton irradiation. TDDB characteristics of normally-off AlGaN/GaN gate-recessed MISHFETs exhibited a gate voltage (<i>V</i><sub>GS</sub>) dependence as expected and showed negligible degradation even after proton irradiation. However, a capture emission time (CET) map and cathodoluminescence (CL) measurements revealed that the MIS structure was degraded with increasing trap states. A technology computer aided design (TCAD) simulation indicated the decrease of the vertical field beneath the gate due to the increase of the trap concentration. Negligible degradation of TDDB can be attributed to this mitigation of the vertical field by proton irradiation.https://www.mdpi.com/2072-666X/10/11/723algan/ganproton irradiationtime-dependent dielectric breakdown (tddb)reliabilitynormally off
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Dongmin Keum Hyungtak Kim
spellingShingle	Dongmin Keum Hyungtak Kim Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors Micromachines algan/gan proton irradiation time-dependent dielectric breakdown (tddb) reliability normally off
author_facet	Dongmin Keum Hyungtak Kim
author_sort	Dongmin Keum
title	Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors
title_short	Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors
title_full	Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors
title_fullStr	Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors
title_full_unstemmed	Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors
title_sort	proton irradiation effects on the time-dependent dielectric breakdown characteristics of normally-off algan/gan gate-recessed metal-insulator-semiconductor heterostructure field effect transistors
publisher	MDPI AG
series	Micromachines
issn	2072-666X
publishDate	2019-10-01
description	In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal−insulator−semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton irradiation. TDDB characteristics of normally-off AlGaN/GaN gate-recessed MISHFETs exhibited a gate voltage (<i>V</i><sub>GS</sub>) dependence as expected and showed negligible degradation even after proton irradiation. However, a capture emission time (CET) map and cathodoluminescence (CL) measurements revealed that the MIS structure was degraded with increasing trap states. A technology computer aided design (TCAD) simulation indicated the decrease of the vertical field beneath the gate due to the increase of the trap concentration. Negligible degradation of TDDB can be attributed to this mitigation of the vertical field by proton irradiation.
topic	algan/gan proton irradiation time-dependent dielectric breakdown (tddb) reliability normally off
url	https://www.mdpi.com/2072-666X/10/11/723
work_keys_str_mv	AT dongminkeum protonirradiationeffectsonthetimedependentdielectricbreakdowncharacteristicsofnormallyoffalgangangaterecessedmetalinsulatorsemiconductorheterostructurefieldeffecttransistors AT hyungtakkim protonirradiationeffectsonthetimedependentdielectricbreakdowncharacteristicsofnormallyoffalgangangaterecessedmetalinsulatorsemiconductorheterostructurefieldeffecttransistors
_version_	1725989527798939648

Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

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