Gas transport mechanisms and the behaviour of impurities in the Acheson furnace for the production of silicon carbide
The Acheson process still remains the method of choice for the industrial production of silicon carbide. The furnace operates in an unsteady thermal regime thus making it difficult to determine the kinetics of the process. In the present study, FactSage Software was used to get an insight and verify...
Main Author: | W.R. Matizamhuka |
---|---|
Format: | Article |
Language: | English |
Published: |
Elsevier
2019-04-01
|
Series: | Heliyon |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2405844018355038 |
Similar Items
-
Crystal structures and the electronic properties of silicon-rich silicon carbide materials by first principle calculations
by: Noura D. Alkhaldi, et al.
Published: (2019-11-01) -
CVD Growth of Silicon Carbide for High Frequency Applications
by: Forsberg, Urban
Published: (2001) -
The indentation and erosion behaviour of a silicon carbide and a silicon carbide-titanium diboride composite
by: Colclough, Anthony Finbar
Published: (1994) -
Dean Acheson : the Secretary of State as a policy maker /
by: Stupak, Ronald J.
Published: (1967) -
Termination and passivation of Silicon Carbide Devices.
by: Wolborski, Maciej
Published: (2005)