Irradiation-induced β to α SiC transformation at low temperature
Abstract We observed that β-SiC, neutron irradiated to 9 dpa (displacements per atom) at ≈1440 °C, began transforming to α-SiC, with radiation-induced Frank dislocation loops serving as the apparent nucleation sites. 1440 °C is a far lower temperature than usual β → α phase transformations in SiC. S...
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2017-04-01
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Online Access: | https://doi.org/10.1038/s41598-017-01395-y |
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doaj-55cc40caa9da4c8ebced5a566a7e1d7e2020-12-08T01:25:22ZengNature Publishing GroupScientific Reports2045-23222017-04-01711910.1038/s41598-017-01395-yIrradiation-induced β to α SiC transformation at low temperatureChad M. Parish0Takaaki Koyanagi1Sosuke Kondo2Yutai Katoh3Oak Ridge National LaboratoryOak Ridge National LaboratoryInstitute of Advanced Energy, Kyoto UniversityOak Ridge National LaboratoryAbstract We observed that β-SiC, neutron irradiated to 9 dpa (displacements per atom) at ≈1440 °C, began transforming to α-SiC, with radiation-induced Frank dislocation loops serving as the apparent nucleation sites. 1440 °C is a far lower temperature than usual β → α phase transformations in SiC. SiC is considered for applications in advanced nuclear systems, as well as for electronic or spintronic applications requiring ion irradiation processing. β-SiC, preferred for nuclear applications, is metastable and undergoes a phase transformation at high temperatures (typically 2000 °C and above). Nuclear reactor concepts are not expected to reach the very high temperatures for thermal transformation. However, our results indicate incipient β → α phase transformation, in the form of small (~5–10 nm) pockets of α-SiC forming in the β matrix. In service transformation could degrade structural stability and fuel integrity for SiC-based materials operated in this regime. However, engineering this transformation deliberately using ion irradiation could enable new electronic applications.https://doi.org/10.1038/s41598-017-01395-y |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Chad M. Parish Takaaki Koyanagi Sosuke Kondo Yutai Katoh |
spellingShingle |
Chad M. Parish Takaaki Koyanagi Sosuke Kondo Yutai Katoh Irradiation-induced β to α SiC transformation at low temperature Scientific Reports |
author_facet |
Chad M. Parish Takaaki Koyanagi Sosuke Kondo Yutai Katoh |
author_sort |
Chad M. Parish |
title |
Irradiation-induced β to α SiC transformation at low temperature |
title_short |
Irradiation-induced β to α SiC transformation at low temperature |
title_full |
Irradiation-induced β to α SiC transformation at low temperature |
title_fullStr |
Irradiation-induced β to α SiC transformation at low temperature |
title_full_unstemmed |
Irradiation-induced β to α SiC transformation at low temperature |
title_sort |
irradiation-induced β to α sic transformation at low temperature |
publisher |
Nature Publishing Group |
series |
Scientific Reports |
issn |
2045-2322 |
publishDate |
2017-04-01 |
description |
Abstract We observed that β-SiC, neutron irradiated to 9 dpa (displacements per atom) at ≈1440 °C, began transforming to α-SiC, with radiation-induced Frank dislocation loops serving as the apparent nucleation sites. 1440 °C is a far lower temperature than usual β → α phase transformations in SiC. SiC is considered for applications in advanced nuclear systems, as well as for electronic or spintronic applications requiring ion irradiation processing. β-SiC, preferred for nuclear applications, is metastable and undergoes a phase transformation at high temperatures (typically 2000 °C and above). Nuclear reactor concepts are not expected to reach the very high temperatures for thermal transformation. However, our results indicate incipient β → α phase transformation, in the form of small (~5–10 nm) pockets of α-SiC forming in the β matrix. In service transformation could degrade structural stability and fuel integrity for SiC-based materials operated in this regime. However, engineering this transformation deliberately using ion irradiation could enable new electronic applications. |
url |
https://doi.org/10.1038/s41598-017-01395-y |
work_keys_str_mv |
AT chadmparish irradiationinducedbtoasictransformationatlowtemperature AT takaakikoyanagi irradiationinducedbtoasictransformationatlowtemperature AT sosukekondo irradiationinducedbtoasictransformationatlowtemperature AT yutaikatoh irradiationinducedbtoasictransformationatlowtemperature |
_version_ |
1724394898146197504 |