Irradiation-induced β to α SiC transformation at low temperature

Abstract We observed that β-SiC, neutron irradiated to 9 dpa (displacements per atom) at ≈1440 °C, began transforming to α-SiC, with radiation-induced Frank dislocation loops serving as the apparent nucleation sites. 1440 °C is a far lower temperature than usual β → α phase transformations in SiC. S...

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Main Authors: Chad M. Parish, Takaaki Koyanagi, Sosuke Kondo, Yutai Katoh
Format: Article
Language:English
Published: Nature Publishing Group 2017-04-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-017-01395-y
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spelling doaj-55cc40caa9da4c8ebced5a566a7e1d7e2020-12-08T01:25:22ZengNature Publishing GroupScientific Reports2045-23222017-04-01711910.1038/s41598-017-01395-yIrradiation-induced β to α SiC transformation at low temperatureChad M. Parish0Takaaki Koyanagi1Sosuke Kondo2Yutai Katoh3Oak Ridge National LaboratoryOak Ridge National LaboratoryInstitute of Advanced Energy, Kyoto UniversityOak Ridge National LaboratoryAbstract We observed that β-SiC, neutron irradiated to 9 dpa (displacements per atom) at ≈1440 °C, began transforming to α-SiC, with radiation-induced Frank dislocation loops serving as the apparent nucleation sites. 1440 °C is a far lower temperature than usual β → α phase transformations in SiC. SiC is considered for applications in advanced nuclear systems, as well as for electronic or spintronic applications requiring ion irradiation processing. β-SiC, preferred for nuclear applications, is metastable and undergoes a phase transformation at high temperatures (typically 2000 °C and above). Nuclear reactor concepts are not expected to reach the very high temperatures for thermal transformation. However, our results indicate incipient β → α phase transformation, in the form of small (~5–10 nm) pockets of α-SiC forming in the β matrix. In service transformation could degrade structural stability and fuel integrity for SiC-based materials operated in this regime. However, engineering this transformation deliberately using ion irradiation could enable new electronic applications.https://doi.org/10.1038/s41598-017-01395-y
collection DOAJ
language English
format Article
sources DOAJ
author Chad M. Parish
Takaaki Koyanagi
Sosuke Kondo
Yutai Katoh
spellingShingle Chad M. Parish
Takaaki Koyanagi
Sosuke Kondo
Yutai Katoh
Irradiation-induced β to α SiC transformation at low temperature
Scientific Reports
author_facet Chad M. Parish
Takaaki Koyanagi
Sosuke Kondo
Yutai Katoh
author_sort Chad M. Parish
title Irradiation-induced β to α SiC transformation at low temperature
title_short Irradiation-induced β to α SiC transformation at low temperature
title_full Irradiation-induced β to α SiC transformation at low temperature
title_fullStr Irradiation-induced β to α SiC transformation at low temperature
title_full_unstemmed Irradiation-induced β to α SiC transformation at low temperature
title_sort irradiation-induced β to α sic transformation at low temperature
publisher Nature Publishing Group
series Scientific Reports
issn 2045-2322
publishDate 2017-04-01
description Abstract We observed that β-SiC, neutron irradiated to 9 dpa (displacements per atom) at ≈1440 °C, began transforming to α-SiC, with radiation-induced Frank dislocation loops serving as the apparent nucleation sites. 1440 °C is a far lower temperature than usual β → α phase transformations in SiC. SiC is considered for applications in advanced nuclear systems, as well as for electronic or spintronic applications requiring ion irradiation processing. β-SiC, preferred for nuclear applications, is metastable and undergoes a phase transformation at high temperatures (typically 2000 °C and above). Nuclear reactor concepts are not expected to reach the very high temperatures for thermal transformation. However, our results indicate incipient β → α phase transformation, in the form of small (~5–10 nm) pockets of α-SiC forming in the β matrix. In service transformation could degrade structural stability and fuel integrity for SiC-based materials operated in this regime. However, engineering this transformation deliberately using ion irradiation could enable new electronic applications.
url https://doi.org/10.1038/s41598-017-01395-y
work_keys_str_mv AT chadmparish irradiationinducedbtoasictransformationatlowtemperature
AT takaakikoyanagi irradiationinducedbtoasictransformationatlowtemperature
AT sosukekondo irradiationinducedbtoasictransformationatlowtemperature
AT yutaikatoh irradiationinducedbtoasictransformationatlowtemperature
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