Fabrication of Small-Pixel CdZnTe Sensors and Characterization with X-rays
Over the past few years, sensors made from high-Z compound semiconductors have attracted quite some attention for use in applications which require the direct detection of X-rays in the energy range 30–100 keV. One of the candidate materials with promising properties is cadmium zinc telluride (CdZnT...
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doaj-5636825a25494d7a90abc3d542f82d362021-04-22T23:02:13ZengMDPI AGSensors1424-82202021-04-01212932293210.3390/s21092932Fabrication of Small-Pixel CdZnTe Sensors and Characterization with X-raysStergios Tsigaridas0Silvia Zanettini1Manuele Bettelli2Nicola Sarzi Amadè3Davide Calestani4Cyril Ponchut5Andrea Zappettini6European Synchrotron Radiation Facility (ESRF), 71 Avenue des Martyrs, F-38043 Grenoble, FranceDue2lab s.r.l., Via Paolo Borsellino 2, 42019 Scandiano, ItalyIMEM-CNR, Istituto Materiali per l’Elettronica e il Magnetismo, Consiglio Nazionale delle Ricerche, Parco Area delle Scienze 37/A, 43124 Parma, ItalyIMEM-CNR, Istituto Materiali per l’Elettronica e il Magnetismo, Consiglio Nazionale delle Ricerche, Parco Area delle Scienze 37/A, 43124 Parma, ItalyIMEM-CNR, Istituto Materiali per l’Elettronica e il Magnetismo, Consiglio Nazionale delle Ricerche, Parco Area delle Scienze 37/A, 43124 Parma, ItalyEuropean Synchrotron Radiation Facility (ESRF), 71 Avenue des Martyrs, F-38043 Grenoble, FranceIMEM-CNR, Istituto Materiali per l’Elettronica e il Magnetismo, Consiglio Nazionale delle Ricerche, Parco Area delle Scienze 37/A, 43124 Parma, ItalyOver the past few years, sensors made from high-Z compound semiconductors have attracted quite some attention for use in applications which require the direct detection of X-rays in the energy range 30–100 keV. One of the candidate materials with promising properties is cadmium zinc telluride (CdZnTe). In the context of this article, we have developed pixelated sensors from CdZnTe crystals grown by Boron oxide encapsulated vertical Bridgman technique. We demonstrate the successful fabrication of CdZnTe pixel sensors with a fine pitch of 55 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="normal">m</mi></semantics></math></inline-formula> and thickness of 1 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">m</mi><mi mathvariant="normal">m</mi></mrow></semantics></math></inline-formula> and 2 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">m</mi><mi mathvariant="normal">m</mi></mrow></semantics></math></inline-formula>. The sensors were bonded on Timepix readout chips to evaluate their response to X-rays provided by conventional sources. Despite the issues related to single-chip fabrication procedure, reasonable uniformity was achieved along with low leakage current values at room temperature. In addition, the sensors show stable performance over time at moderate incoming fluxes, below <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mn>10</mn><mn>6</mn></msup></semantics></math></inline-formula> photons<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mo>.</mo><mi mathvariant="normal">m</mi><msup><mi mathvariant="normal">m</mi><mrow><mo>−</mo><mn>2</mn></mrow></msup><mo>.</mo><msup><mi mathvariant="normal">s</mi><mrow><mo>−</mo><mn>1</mn></mrow></msup></mrow></semantics></math></inline-formula>.https://www.mdpi.com/1424-8220/21/9/2932cadmium zinc telluride (CdZnTe)vertical Bridgmanhigh-Z sensorspixel detectorsX-ray detectorsTimepix |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Stergios Tsigaridas Silvia Zanettini Manuele Bettelli Nicola Sarzi Amadè Davide Calestani Cyril Ponchut Andrea Zappettini |
spellingShingle |
Stergios Tsigaridas Silvia Zanettini Manuele Bettelli Nicola Sarzi Amadè Davide Calestani Cyril Ponchut Andrea Zappettini Fabrication of Small-Pixel CdZnTe Sensors and Characterization with X-rays Sensors cadmium zinc telluride (CdZnTe) vertical Bridgman high-Z sensors pixel detectors X-ray detectors Timepix |
author_facet |
Stergios Tsigaridas Silvia Zanettini Manuele Bettelli Nicola Sarzi Amadè Davide Calestani Cyril Ponchut Andrea Zappettini |
author_sort |
Stergios Tsigaridas |
title |
Fabrication of Small-Pixel CdZnTe Sensors and Characterization with X-rays |
title_short |
Fabrication of Small-Pixel CdZnTe Sensors and Characterization with X-rays |
title_full |
Fabrication of Small-Pixel CdZnTe Sensors and Characterization with X-rays |
title_fullStr |
Fabrication of Small-Pixel CdZnTe Sensors and Characterization with X-rays |
title_full_unstemmed |
Fabrication of Small-Pixel CdZnTe Sensors and Characterization with X-rays |
title_sort |
fabrication of small-pixel cdznte sensors and characterization with x-rays |
publisher |
MDPI AG |
series |
Sensors |
issn |
1424-8220 |
publishDate |
2021-04-01 |
description |
Over the past few years, sensors made from high-Z compound semiconductors have attracted quite some attention for use in applications which require the direct detection of X-rays in the energy range 30–100 keV. One of the candidate materials with promising properties is cadmium zinc telluride (CdZnTe). In the context of this article, we have developed pixelated sensors from CdZnTe crystals grown by Boron oxide encapsulated vertical Bridgman technique. We demonstrate the successful fabrication of CdZnTe pixel sensors with a fine pitch of 55 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mi mathvariant="normal">m</mi></semantics></math></inline-formula> and thickness of 1 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">m</mi><mi mathvariant="normal">m</mi></mrow></semantics></math></inline-formula> and 2 <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mi mathvariant="normal">m</mi><mi mathvariant="normal">m</mi></mrow></semantics></math></inline-formula>. The sensors were bonded on Timepix readout chips to evaluate their response to X-rays provided by conventional sources. Despite the issues related to single-chip fabrication procedure, reasonable uniformity was achieved along with low leakage current values at room temperature. In addition, the sensors show stable performance over time at moderate incoming fluxes, below <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msup><mn>10</mn><mn>6</mn></msup></semantics></math></inline-formula> photons<inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><mrow><mo>.</mo><mi mathvariant="normal">m</mi><msup><mi mathvariant="normal">m</mi><mrow><mo>−</mo><mn>2</mn></mrow></msup><mo>.</mo><msup><mi mathvariant="normal">s</mi><mrow><mo>−</mo><mn>1</mn></mrow></msup></mrow></semantics></math></inline-formula>. |
topic |
cadmium zinc telluride (CdZnTe) vertical Bridgman high-Z sensors pixel detectors X-ray detectors Timepix |
url |
https://www.mdpi.com/1424-8220/21/9/2932 |
work_keys_str_mv |
AT stergiostsigaridas fabricationofsmallpixelcdzntesensorsandcharacterizationwithxrays AT silviazanettini fabricationofsmallpixelcdzntesensorsandcharacterizationwithxrays AT manuelebettelli fabricationofsmallpixelcdzntesensorsandcharacterizationwithxrays AT nicolasarziamade fabricationofsmallpixelcdzntesensorsandcharacterizationwithxrays AT davidecalestani fabricationofsmallpixelcdzntesensorsandcharacterizationwithxrays AT cyrilponchut fabricationofsmallpixelcdzntesensorsandcharacterizationwithxrays AT andreazappettini fabricationofsmallpixelcdzntesensorsandcharacterizationwithxrays |
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1721513893932564480 |