VDMOSFET Model Parameter Extraction Based on Electrical and Optical Measurements
Lateral Device parameters for VDMOSFET (Vertical double diffused metal oxide semiconductor field effect transistor) with hexagonal cells has been extracted by an original model based on electrical and optical measurements. Using microscopic observation for the ship of the device and by C-V character...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2001-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1155/APEC.23.185 |
| Summary: | Lateral Device parameters for VDMOSFET (Vertical double diffused metal oxide
semiconductor field effect transistor) with hexagonal cells has been extracted by an
original model based on electrical and optical measurements. Using microscopic
observation for the ship of the device and by C-V characterization, the lateral device
structure parameters could be extracted. Values of the extracted parameters are in good
correlation with the values given by the manufactured. Advantage of this model the high
precision results with a low cost. Perhaps, the most important point in this model, that
we can replace the other techniques usually employed in this study where we destroyed
the device for cut and cross section of the structure. The proposed technique in this paper
can be very useful for analyzing any complex geometrical structure of VDMOS
transistors (hexagonal, triangular, square etc...). |
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| ISSN: | 0882-7516 1563-5031 |