Integration of Emission-wavelength-controlled InAs Quantum Dots for Ultrabroadband Near-infrared Light Source

Near-infrared (NIR) light sources are widely utilized in biological and medical imaging systems owing to their long penetration depth in living tissues. In a recently developed biomedical non-invasive cross-sectional imaging system, called optical coherence tomography (OCT), a broadband spectrum is...

Full description

Bibliographic Details
Main Authors: Nobuhiko Ozaki, Koichi Takeuchi, Yuji Hino, Yohei Nakatani, Takuma Yasuda, Shunsuke Ohkouchi, Eiichiro Watanabe, Hirotaka Ohsato, Naoki Ikeda, Yoshimasa Sugimoto, Edmund Clarke, Richard A. Hogg
Format: Article
Language:English
Published: SAGE Publishing 2014-09-01
Series:Nanomaterials and Nanotechnology
Subjects:
MBE
OCT
Online Access:http://www.intechopen.com/journals/nanomaterials_and_nanotechnology/integration-of-emission-wavelengthcontrolled-inas-quantum-dots-for-ultrabroadband-near-infrared-ligh
id doaj-587f0b6c08b94a84ab8adb019df7b821
record_format Article
spelling doaj-587f0b6c08b94a84ab8adb019df7b8212020-11-25T03:01:43ZengSAGE PublishingNanomaterials and Nanotechnology1847-98042014-09-01426http://dx.doi.org/10.5772/5931547525Integration of Emission-wavelength-controlled InAs Quantum Dots for Ultrabroadband Near-infrared Light SourceNobuhiko OzakiKoichi TakeuchiYuji HinoYohei NakataniTakuma YasudaShunsuke OhkouchiEiichiro WatanabeHirotaka OhsatoNaoki IkedaYoshimasa SugimotoEdmund ClarkeRichard A. HoggNear-infrared (NIR) light sources are widely utilized in biological and medical imaging systems owing to their long penetration depth in living tissues. In a recently developed biomedical non-invasive cross-sectional imaging system, called optical coherence tomography (OCT), a broadband spectrum is also required, because OCT is based on low coherence interferometry. To meet these operational requirements, we have developed a NIR broadband light source by integrating self-assembled InAs quantum dots (QDs) grown on a GaAs substrate (InAs/GaAs QDs) with different emission wavelengths. In this review, we introduce the developed light sources and QD growth techniques that are used to control the emission wavelength for broadband emission spectra with center wavelengths of 1.05 and 1.3 μm. Although the strain-induced Stranski-Krastanov (S-K) mode-grown InAs/GaAs QDs normally emit light at a wavelength of around 1.2 μm, the central emission wavelength can be controlled to be between 0.9–1.4 μm by the use of an In-flush technique, the insertion of a strainreducing layer (SRL) and bi-layer QD growth techniques. These techniques are useful for applying InAs/GaAs QDs as NIR broadband light sources and are especially suitable for our proposed spectral-shape-controllable broadband NIR light source. The potential of this light source for improving the performance of OCT systems is discussed.http://www.intechopen.com/journals/nanomaterials_and_nanotechnology/integration-of-emission-wavelengthcontrolled-inas-quantum-dots-for-ultrabroadband-near-infrared-lighQuantum DotMBESelective Area GrowthIn-flushBi-layer QDOCTNear-infrared Broadband Light Source
collection DOAJ
language English
format Article
sources DOAJ
author Nobuhiko Ozaki
Koichi Takeuchi
Yuji Hino
Yohei Nakatani
Takuma Yasuda
Shunsuke Ohkouchi
Eiichiro Watanabe
Hirotaka Ohsato
Naoki Ikeda
Yoshimasa Sugimoto
Edmund Clarke
Richard A. Hogg
spellingShingle Nobuhiko Ozaki
Koichi Takeuchi
Yuji Hino
Yohei Nakatani
Takuma Yasuda
Shunsuke Ohkouchi
Eiichiro Watanabe
Hirotaka Ohsato
Naoki Ikeda
Yoshimasa Sugimoto
Edmund Clarke
Richard A. Hogg
Integration of Emission-wavelength-controlled InAs Quantum Dots for Ultrabroadband Near-infrared Light Source
Nanomaterials and Nanotechnology
Quantum Dot
MBE
Selective Area Growth
In-flush
Bi-layer QD
OCT
Near-infrared Broadband Light Source
author_facet Nobuhiko Ozaki
Koichi Takeuchi
Yuji Hino
Yohei Nakatani
Takuma Yasuda
Shunsuke Ohkouchi
Eiichiro Watanabe
Hirotaka Ohsato
Naoki Ikeda
Yoshimasa Sugimoto
Edmund Clarke
Richard A. Hogg
author_sort Nobuhiko Ozaki
title Integration of Emission-wavelength-controlled InAs Quantum Dots for Ultrabroadband Near-infrared Light Source
title_short Integration of Emission-wavelength-controlled InAs Quantum Dots for Ultrabroadband Near-infrared Light Source
title_full Integration of Emission-wavelength-controlled InAs Quantum Dots for Ultrabroadband Near-infrared Light Source
title_fullStr Integration of Emission-wavelength-controlled InAs Quantum Dots for Ultrabroadband Near-infrared Light Source
title_full_unstemmed Integration of Emission-wavelength-controlled InAs Quantum Dots for Ultrabroadband Near-infrared Light Source
title_sort integration of emission-wavelength-controlled inas quantum dots for ultrabroadband near-infrared light source
publisher SAGE Publishing
series Nanomaterials and Nanotechnology
issn 1847-9804
publishDate 2014-09-01
description Near-infrared (NIR) light sources are widely utilized in biological and medical imaging systems owing to their long penetration depth in living tissues. In a recently developed biomedical non-invasive cross-sectional imaging system, called optical coherence tomography (OCT), a broadband spectrum is also required, because OCT is based on low coherence interferometry. To meet these operational requirements, we have developed a NIR broadband light source by integrating self-assembled InAs quantum dots (QDs) grown on a GaAs substrate (InAs/GaAs QDs) with different emission wavelengths. In this review, we introduce the developed light sources and QD growth techniques that are used to control the emission wavelength for broadband emission spectra with center wavelengths of 1.05 and 1.3 μm. Although the strain-induced Stranski-Krastanov (S-K) mode-grown InAs/GaAs QDs normally emit light at a wavelength of around 1.2 μm, the central emission wavelength can be controlled to be between 0.9–1.4 μm by the use of an In-flush technique, the insertion of a strainreducing layer (SRL) and bi-layer QD growth techniques. These techniques are useful for applying InAs/GaAs QDs as NIR broadband light sources and are especially suitable for our proposed spectral-shape-controllable broadband NIR light source. The potential of this light source for improving the performance of OCT systems is discussed.
topic Quantum Dot
MBE
Selective Area Growth
In-flush
Bi-layer QD
OCT
Near-infrared Broadband Light Source
url http://www.intechopen.com/journals/nanomaterials_and_nanotechnology/integration-of-emission-wavelengthcontrolled-inas-quantum-dots-for-ultrabroadband-near-infrared-ligh
work_keys_str_mv AT nobuhikoozaki integrationofemissionwavelengthcontrolledinasquantumdotsforultrabroadbandnearinfraredlightsource
AT koichitakeuchi integrationofemissionwavelengthcontrolledinasquantumdotsforultrabroadbandnearinfraredlightsource
AT yujihino integrationofemissionwavelengthcontrolledinasquantumdotsforultrabroadbandnearinfraredlightsource
AT yoheinakatani integrationofemissionwavelengthcontrolledinasquantumdotsforultrabroadbandnearinfraredlightsource
AT takumayasuda integrationofemissionwavelengthcontrolledinasquantumdotsforultrabroadbandnearinfraredlightsource
AT shunsukeohkouchi integrationofemissionwavelengthcontrolledinasquantumdotsforultrabroadbandnearinfraredlightsource
AT eiichirowatanabe integrationofemissionwavelengthcontrolledinasquantumdotsforultrabroadbandnearinfraredlightsource
AT hirotakaohsato integrationofemissionwavelengthcontrolledinasquantumdotsforultrabroadbandnearinfraredlightsource
AT naokiikeda integrationofemissionwavelengthcontrolledinasquantumdotsforultrabroadbandnearinfraredlightsource
AT yoshimasasugimoto integrationofemissionwavelengthcontrolledinasquantumdotsforultrabroadbandnearinfraredlightsource
AT edmundclarke integrationofemissionwavelengthcontrolledinasquantumdotsforultrabroadbandnearinfraredlightsource
AT richardahogg integrationofemissionwavelengthcontrolledinasquantumdotsforultrabroadbandnearinfraredlightsource
_version_ 1724692445746167808