Ultralow-Power SOTB CMOS Technology Operating Down to 0.4 V

Ultralow-Power SOTB CMOS Technology Operating Down to 0.4 V

Ultralow-voltage (ULV) CMOS will be a core building block of highly energy efficient electronics. Although the operation at the minimum energy point (MEP) is effective for ULP CMOS circuits, its slow operation speed often means that it is not used in many applications. The silicon-on-thin-buried-oxi...

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Bibliographic Details
Main Authors: Nobuyuki Sugii, Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi, Koichiro Ishibashi, Tomoko Mizutani, Toshiro Hiramoto
Format: Article
Language:English
Published: MDPI AG 2014-04-01
Series:Journal of Low Power Electronics and Applications
Subjects:
ultralow power
ultralow voltage
CMOS
minimum energy point
variability
back bias
FDSOI
silicon-on-thin-buried-oxide (SOTB)
thin BOX
Online Access:http://www.mdpi.com/2079-9268/4/2/65

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http://www.mdpi.com/2079-9268/4/2/65

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