Structural and spectroscopic analysis of wurtzite (ZnO)1−x(Sb2O3)x composite semiconductor

• Main Authors: Hafeez ullah, Amjid Iqbal, M. Zakria, Arshad Mahmood
• Format: Article
• Language: English
• Published: Elsevier 2015-04-01
• Series: Progress in Natural Science: Materials International
• Subjects: (ZnO)1−x(Sb2O3)x; Semiconductors; XRD; Raman spectroscopy; Impedance spectroscopy
• Online Access: http://www.sciencedirect.com/science/article/pii/S1002007115000192

The structural, vibrational and impedance analysis for (ZnO)1−x(Sb2O3)x composite synthesized by solid state reaction technique were carried out in the present investigation. X-ray diffraction (XRD) study showed that (ZnO)1−x(Sb2O3)x composite has hexagonal (wurtzite) crystal structure. Variation in lattice constants with Sb-doping indicated the proper incorporation of Sb dopant in ZnO host matrix. The results of Raman spectroscopy test suggested the signature of E2 (high) and E1 (TO) Raman modes, and verified the wurtzite structure of (ZnO)1−x(Sb2O3)x composite. Two additional phonon bands (671, 712) cm−1 appeared in Raman spectra of composite samples due to the existence of the lattice defects caused by Sb doping or may be other intrinsic lattice defects formed during the synthesis of (ZnO)1−x(Sb2O3)x composite. The frequency dependent on the electrical characteristics, such as, impedance (Z), dielectric constant (ε) and AC conductivity (σ) have been studied in a range of frequencies for different Sb concentration at room temperature. The electrical measurement results showed that the impedance increased with Sb dopant concentration, while dielectric constant and AC conductivity decreased with Sb dopant concentration.