Amorphous InGaMgO Ultraviolet Photo-TFT with Ultrahigh Photosensitivity and Extremely Large Responsivity

Amorphous InGaMgO Ultraviolet Photo-TFT with Ultrahigh Photosensitivity and Extremely Large Responsivity

Recently, amorphous InGaZnO ultraviolet photo thin-film transistors have exhibited great potential for application in future display technologies. Nevertheless, the transmittance of amorphous InGaZnO (~80%) is still not high enough, resulting in the relatively large sacrifice of aperture ratio for e...

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Bibliographic Details
Main Authors: Yiyu Zhang, Ling-Xuan Qian, Zehan Wu, Xingzhao Liu
Format: Article
Language:English
Published: MDPI AG 2017-02-01
Series:Materials
Subjects:
InGaMgO
post-deposition annealing
ultraviolet photo-TFT
oxygen vacancy
photosensitivity
responsivity
Online Access:http://www.mdpi.com/1996-1944/10/2/168

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