Directional ionic transport across the oxide interface enables low-temperature epitaxy of rutile TiO2

The research to utilize chemical potential mismatch for materials synthesis has been limited across the oxide interface. Here, the authors show that directional ionic transport from the VO2 layers stabilizes the rutile TiO2 phase at extremely low temperatures, at which epitaxy is difficult, by effec...

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Bibliographic Details
Main Authors: Yunkyu Park, Hyeji Sim, Minguk Jo, Gi-Yeop Kim, Daseob Yoon, Hyeon Han, Younghak Kim, Kyung Song, Donghwa Lee, Si-Young Choi, Junwoo Son
Format: Article
Language:English
Published: Nature Publishing Group 2020-03-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-020-15142-x
Description
Summary:The research to utilize chemical potential mismatch for materials synthesis has been limited across the oxide interface. Here, the authors show that directional ionic transport from the VO2 layers stabilizes the rutile TiO2 phase at extremely low temperatures, at which epitaxy is difficult, by effectively lowering the activation barrier for crystallization.
ISSN:2041-1723