Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping
High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output c...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Iran University of Science and Technology
2010-06-01
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| Series: | Iranian Journal of Electrical and Electronic Engineering |
| Subjects: | |
| Online Access: | http://ijeee.iust.ac.ir/browse.php?a_code=A-10-222-2&slc_lang=en&sid=1 |
| Summary: | High Q frequency reference devices are essential components in many Integrated
circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate
in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device
has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde
channel and Gaussian retrograde channels have been investigated. |
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| ISSN: | 1735-2827 2383-3890 |