Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping

Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping

High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output c...

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Bibliographic Details
Main Authors: M. Fathipour, M. H. Refan, S. M. Ebrahimi
Format: Article
Language:English
Published: Iran University of Science and Technology 2010-06-01
Series:Iranian Journal of Electrical and Electronic Engineering
Subjects:
Natural Frequencies
Pull-in Voltage
Retrograde Channel
Resonant Suspended Gate (RSG) MOSFET.
Online Access:http://ijeee.iust.ac.ir/browse.php?a_code=A-10-222-2&slc_lang=en&sid=1
id doaj-5e41b3441757467db1e2c1ed4e0f264b
record_format Article
spelling doaj-5e41b3441757467db1e2c1ed4e0f264b2020-11-24T22:49:05ZengIran University of Science and TechnologyIranian Journal of Electrical and Electronic Engineering1735-28272383-38902010-06-01627783Design of a Resonant Suspended Gate MOSFET with Retrograde Channel DopingM. Fathipour0M. H. Refan1S. M. Ebrahimi2 High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde channel and Gaussian retrograde channels have been investigated.http://ijeee.iust.ac.ir/browse.php?a_code=A-10-222-2&slc_lang=en&sid=1Natural Frequencies Pull-in Voltage Retrograde Channel Resonant Suspended Gate (RSG) MOSFET.
collection DOAJ
language English
format Article
sources DOAJ
author M. Fathipour
M. H. Refan
S. M. Ebrahimi
spellingShingle M. Fathipour
M. H. Refan
S. M. Ebrahimi
Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping
Iranian Journal of Electrical and Electronic Engineering
Natural Frequencies
Pull-in Voltage
Retrograde Channel
Resonant Suspended Gate (RSG) MOSFET.
author_facet M. Fathipour
M. H. Refan
S. M. Ebrahimi
author_sort M. Fathipour
title Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping
title_short Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping
title_full Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping
title_fullStr Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping
title_full_unstemmed Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping
title_sort design of a resonant suspended gate mosfet with retrograde channel doping
publisher Iran University of Science and Technology
series Iranian Journal of Electrical and Electronic Engineering
issn 1735-2827
2383-3890
publishDate 2010-06-01
description High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde channel and Gaussian retrograde channels have been investigated.
topic Natural Frequencies
Pull-in Voltage
Retrograde Channel
Resonant Suspended Gate (RSG) MOSFET.
url http://ijeee.iust.ac.ir/browse.php?a_code=A-10-222-2&slc_lang=en&sid=1
work_keys_str_mv AT mfathipour designofaresonantsuspendedgatemosfetwithretrogradechanneldoping
AT mhrefan designofaresonantsuspendedgatemosfetwithretrogradechanneldoping
AT smebrahimi designofaresonantsuspendedgatemosfetwithretrogradechanneldoping
_version_ 1725677366227763200

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