The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors

The DEPFET Sensor-Amplifier Structure: A Method to Beat 1/f Noise and Reach Sub-Electron Noise in Pixel Detectors

Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. Th...

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Bibliographic Details
Main Authors: Gerhard Lutz, Matteo Porro, Stefan Aschauer, Stefan Wölfel, Lothar Strüder
Format: Article
Language:English
Published: MDPI AG 2016-04-01
Series:Sensors
Subjects:
DEPFET
photon detection
sub-electron precision
charge measurement
pixel detector
X-ray spectroscopy
Online Access:http://www.mdpi.com/1424-8220/16/5/608
Description
Summary:Depleted field effect transistors (DEPFET) are used to achieve very low noise signal charge readout with sub-electron measurement precision. This is accomplished by repeatedly reading an identical charge, thereby suppressing not only the white serial noise but also the usually constant 1/f noise. The repetitive non-destructive readout (RNDR) DEPFET is an ideal central element for an active pixel sensor (APS) pixel. The theory has been derived thoroughly and results have been verified on RNDR-DEPFET prototypes. A charge measurement precision of 0.18 electrons has been achieved. The device is well-suited for spectroscopic X-ray imaging and for optical photon counting in pixel sensors, even at high photon numbers in the same cell.
ISSN:1424-8220

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